Scanning spreading resistance microscopy for carrier profiling beyond 32nm node

Author(s):  
J. Mody ◽  
G. Zschatzsch ◽  
S. Kolling ◽  
A. De Keersgieter ◽  
G. Eneman ◽  
...  
Keyword(s):  
Author(s):  
J.S. McMurray ◽  
C.M. Molella

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.


2007 ◽  
Vol 84 (3) ◽  
pp. 547-550 ◽  
Author(s):  
Lasse Vines ◽  
Reinhard Kögler ◽  
Andrej Yu. Kuznetsov

1970 ◽  
Vol 17 (6) ◽  
pp. 482-484 ◽  
Author(s):  
E.D. Garlinger ◽  
H.L. Stover

Author(s):  
D. Álvarez ◽  
S. Schömann ◽  
B. Goebel ◽  
D. Manger ◽  
T. Schlösser ◽  
...  

1981 ◽  
Vol 24 (6) ◽  
pp. 557-562 ◽  
Author(s):  
S.C. Choo ◽  
M.S. Leong ◽  
L.S. Tan

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