Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.

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Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Chinese Physics B ◽

10.1088/1674-1056/26/8/088501 ◽

2017 ◽

Vol 26 (8) ◽

pp. 088501 ◽

Cited By ~ 1

Author(s):

Bing Ye ◽

Jie Liu ◽

Tie-Shan Wang ◽

Tian-Qi Liu ◽

Jie Luo ◽

...

Keyword(s):

Single Event Upset ◽

Single Event ◽

Sram Cell

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The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications

4th IEEE Conference on Nanotechnology, 2004. ◽

10.1109/nano.2004.1392364 ◽

2005 ◽

Cited By ~ 5

Author(s):

T. Nirschl ◽

S. Henzler ◽

C. Pacha ◽

Peng-Fei Wang ◽

W. Hansch ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Voltage ◽

Single Event Upset ◽

Single Event ◽

Sram Cell ◽

Effect Transistor

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Design of a high-performance 12T SRAM cell for single event upset tolerance

Science China Information Sciences ◽

10.1007/s11432-020-3123-2 ◽

2021 ◽

Vol 64 (11) ◽

Author(s):

Chunhua Qi ◽

Yanqing Zhang ◽

Guoliang Ma ◽

Chaoming Liu ◽

Tianqi Wang ◽

...

Keyword(s):

High Performance ◽

Single Event Upset ◽

Single Event ◽

Sram Cell

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Impact of Single Event Upset on Voltage and Current Behaviors of CNTFET SRAM and a Comparison with CMOS SRAM

Journal of Circuits System and Computers ◽

10.1142/s0218126617500207 ◽

2016 ◽

Vol 26 (02) ◽

pp. 1750020

Author(s):

T. R. Rajalakshmi ◽

R. Sudhakar

Keyword(s):

Carbon Nanotubes ◽

Carbon Nanotube ◽

High Performance ◽

High Stability ◽

Single Event Upset ◽

Single Event ◽

Sram Cell ◽

Current Characteristics ◽

The Impact ◽

In Cells

Carbon nanotubes (CNTs) provide a better alternative of silicon when it comes to nanoscales. Thanks to the high stability and high performance of carbon nanotube, CNT-based FET (CNTFET) devices are gaining popularity of late. They provide high packaging densities. Not much study had been done to analyze the characteristics of CNTFET SRAM in the presence of single event upset (SEU). The aim of this paper is to analyze the way in which SEU brings alterations in CNTFET SRAM characteristics and perform its comparison with respect to CMOS 6T SRAM. This paper analyzes the impact of SEU on voltage and current characteristics in CNTFET-based SRAM cell during three different conditions —read, write and hold modes. In the analysis, CNTFET SRAM showed that even small amount of radiations can cause flipping in cells and special circuitries are required to detect and correct the errors for SEU affected SRAM.

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