The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications
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2004 ◽
Vol 14
(02)
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pp. 311-325
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Keyword(s):
2013 ◽
Vol 52
(4S)
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pp. 04CC15
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2010 ◽
Vol 49
(4)
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pp. 04DE16
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2013 ◽
Vol 740-742
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pp. 950-953
2017 ◽
Vol 2
(4)
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pp. 045004
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2016 ◽
Vol 37
(4)
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pp. 486-488
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