A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

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Two-Phase Resonant Converter to Drive High-Power LED Lamps

Electronics ◽

10.3390/electronics9010053 ◽

2019 ◽

Vol 9 (1) ◽

pp. 53 ◽

Cited By ~ 1

Author(s):

Christian Brañas ◽

Rosario Casanueva ◽

Francisco J. Díaz ◽

Francisco J. Azcondo

Keyword(s):

Dynamic Response ◽

High Power ◽

High Frequency ◽

Pulsed Current ◽

Resonant Converter ◽

Two Phase ◽

Street Lighting ◽

Spice Model ◽

Flicker Effect ◽

Output Filter

This paper presents the design and modeling of a two-phase resonant converter that drives a LED lamp with a high-frequency pulsed current free of instabilities and flicker effect, fulfilling the recommendations of the IEEE PAR 1789-2015, so that it enables visible light-based communication at a 10 kB/s bit rate. The dynamic study of the converter takes into consideration the effect of the reflected impedance of the output filter on the AC side. In order to evaluate the dynamic response of the converter, a Spice model is defined. A 120 W prototype intended for street lighting applications has been built to validate the analysis and modeling.

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United methodology for pre-determination of bipolar transistor SPICE model parameters for low, middle and high power ICs

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513975 ◽

2002 ◽

Author(s):

K.O. Petrosjanc ◽

I.A. Kharitonov ◽

N.I. Rjabov

Keyword(s):

High Power ◽

Bipolar Transistor ◽

Model Parameters ◽

Spice Model

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Modeling of gallium nitride transistors for high power and high temperature applications

10.32469/10355/79491 ◽

2020 ◽

Author(s):

◽

Samira Shamsir

Keyword(s):

High Temperature ◽

Analytical Model ◽

High Power ◽

Research Work ◽

Device Simulation ◽

Device Modeling ◽

Power Devices ◽

Power Transistors ◽

Spice Model ◽

Temperature Applications

Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this research work includes three key areas of GaN device modeling such as physics-based analytical modeling, device simulation with numerical simulator and electrothermal SPICE model for circuit simulation. The analytical model presented in this dissertation enables understanding of the fundamental physics of this newly emerged GaN device technology to improve the operation of existing device structures and to optimize the device configuration in the future. The numerical device simulation allows to verify the analytical model and study the impact of different device parameters. An empirical SPICE model for standard circuit simulator has been developed and presented in the dissertation which allows simulation of power electronic circuits employing GaN power devices. The empirical model provides a good approximation of the device behavior and creates a link between the physics-based analytical model and the actual device testing data. Furthermore, it includes an electrothermal model which can predict the device behavior at elevated temperatures as required for high temperature applications.

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Dynamic Modeling and Wear-Based Remaining Useful Life Prediction of High Power Clutch Systems

Tribology Transactions ◽

10.1080/05698190590927451 ◽

2005 ◽

Vol 48 (2) ◽

pp. 208-217 ◽

Cited By ~ 32

Author(s):

Matthew Watson ◽

Carl Byington ◽

Douglas Edwards ◽

Sanket Amin

Keyword(s):

Dynamic Modeling ◽

High Power ◽

Life Prediction ◽

Remaining Useful Life ◽

Useful Life

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Less Power, Greater Conflict

Social Psychology ◽

10.1027/1864-9335/a000327 ◽

2018 ◽

Vol 49 (1) ◽

pp. 47-62 ◽

Cited By ~ 1

Author(s):

Petra C. Schmid

Keyword(s):

Low Power ◽

High Power ◽

Goal Pursuit ◽

Goal Conflict ◽

Personal Goals ◽

Multiple Goals ◽

Objective Performance ◽

The Future ◽

The Way

Abstract. Power facilitates goal pursuit, but how does power affect the way people respond to conflict between their multiple goals? Our results showed that higher trait power was associated with reduced experience of conflict in scenarios describing multiple goals (Study 1) and between personal goals (Study 2). Moreover, manipulated low power increased individuals’ experience of goal conflict relative to high power and a control condition (Studies 3 and 4), with the consequence that they planned to invest less into the pursuit of their goals in the future. With its focus on multiple goals and individuals’ experiences during goal pursuit rather than objective performance, the present research uses new angles to examine power effects on goal pursuit.

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