A High Precision IGBT Macro-Model for Switching Simulations

2016 ◽  
Vol 698 ◽  
pp. 109-117
Author(s):  
Masaki Kazumi ◽  
Hitoshi Aoki ◽  
Yukiko Arai ◽  
Shunichiro Todoroki ◽  
Takuya Totsuka ◽  
...  
Keyword(s):  
High Power ◽  
Source Code ◽  
Small Signal ◽  
Electrical Circuits ◽  
Macro Model ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Spice Model ◽  
Test Circuit ◽  
Off Time

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

NEW COLLECTOR OF PLANAR INSULATED GATE BIPOLAR TRANSISTOR FOR BROAD APPLICATIONS

2005 ◽  
Vol 19 (24) ◽  
pp. 1231-1240 ◽  
Author(s):  
FEI ZHANG ◽  
LINA SHI ◽  
WEN YU ◽  
CHENGFANG LI ◽  
XIAOWEI SUN
Keyword(s):  
Power Loss ◽  
Mixed Mode ◽  
Energy Band Diagram ◽  
The Other ◽  
Two Dimensional ◽  
Band Diagram ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Operation Speed ◽  
Off Time

A new concept of Insulated Gate Bipolar Transisitor (IGBT) with a Si/Ge layer collector is proposed to meet different requirements for turn-on voltage and turn-off time. The operation principles of IGBT are discussed and the energy band diagram of Si/Ge heterojunction is employed to explain the inner dynamic mechanism of the proposed IGBT. Two-dimensional (2D) device-circuit mixed-mode simulations indicate that the tail-current, which is a major cause of the power loss and limits the operation speed of the device, is suppressed effectively by using the Si/Ge layer collector. On the other hand, turn-on voltage is increased by the use of the Si/Ge collector. Furthermore, the turn-on voltage is increasing with the increase of the areal rate of the Ge region in the whole collector, while the turn-off time is reversed. This valuable information leads to the freely tunable planar IGBT by adapting the different areal rates of the Ge region to cast to different actual situations. Detailed physical explanations are also given.

scholarly journals Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3802 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Kuang Sheng
Keyword(s):  
High Power ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Power Modules ◽  
Voltage Plateau ◽  
Source Voltage ◽  
Bus Voltage

The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.

DYNAMIC PERFORMANCE OF MCTs UNDER INDUCTIVE LOAD CONDITIONS

1994 ◽  
Vol 04 (04) ◽  
pp. 471-485
Author(s):  
MARIAN K. KAZIMIERCZUK ◽  
NANDAKUMAR THIRUNARAYAN
Keyword(s):  
Dynamic Performance ◽  
Anode Current ◽  
Cathode Voltage ◽  
Inductive Load ◽  
Drive Voltage ◽  
Turn On ◽  
Test Circuit ◽  
Output Capacitance ◽  
Off Time ◽  
Measured Input

PMOS-controlled thyristors (PMCTs) were tested in a single-switch configuration under inductive-load hard-switching conditions. The transient current and voltage waveforms during the turn-on and turn-off transitions were observed for 50 A/1000 V devices. The experimental waveforms are given for the anode current, the inductor current, the anode-to-cathode voltage, and the gate-to-anode drive voltage. These waveforms were obtained for periodic gate drive voltage at 6.5 kHz. The test circuit was operated at power levels of up to 370 W. The measured turn-on time was 0.255 μs at an anode-to-cathode voltage of 270 V and the measured turn-off time was 1.6 μs at an anode current of 16 A. The measured storage time was 1 μs. The measured input capacitance of the MCT was 13.5 nF and the output capacitance was 66.7 nF. It was found that the input and output capacitances of PMCTs are approximately linear.

A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

2021 ◽  
Vol 16 (5) ◽  
pp. 762-765
Author(s):  
Hae Seock Lee ◽  
Geon Hee Lee ◽  
Byoung Sup Ahn ◽  
Ey Goo Kang
Keyword(s):  
Breakdown Voltage ◽  
Semiconductor Device ◽  
Voltage Drop ◽  
Bipolar Transistor ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor ◽  
Voltage Loss ◽  
One Step ◽  
Junction Transistor ◽  
Off Time

Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

scholarly journals A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

2019 ◽  
Vol 7 (1) ◽  
pp. 62-70 ◽  
Author(s):  
Yaoqiang Duan ◽  
Fei Xiao ◽  
Yifei Luo ◽  
Francesco Iannuzzo
Keyword(s):  
High Power ◽  
Spice Model

A Novel High Power Factor Soft-Switching Converter

2012 ◽  
Vol 433-440 ◽  
pp. 5549-5555
Author(s):  
Yun Tao Yue ◽  
Yan Lin
Keyword(s):  
Power Factor ◽  
High Power ◽  
Power Supply ◽  
High Efficiency ◽  
Soft Switching ◽  
Switching Converter ◽  
Turn On ◽  
High Power Factor ◽  
Power Factor Corrector ◽  
Zero Voltage

A novel scheme of low power communication power supply with high power factor and soft-switching is presented, a power factor corrector and dc/dc converter of passive lossless soft-switching is based on a ML4803 IC control. DC/DC converter introduces a novel two-transistor forward soft-switching technique, which realizes zero-voltage turn-on and turn-off, with no additional switches. a communication power supply module is developed in this paper. It has the characteristics of rapid dynamic response, high power factor, high efficiency and small bulk ect.

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

Wideband modeling and transient analysis of sub-module in modular multilevel converter

2017 ◽  
Vol 36 (6) ◽  
pp. 1792-1805 ◽  
Author(s):  
Lei Qi ◽  
Zhiyuan Shen ◽  
Jianjian Gao ◽  
Guoliang Zhao ◽  
Xiang Cui ◽  
...  
Keyword(s):  
Dynamic Testing ◽  
Extraction Procedure ◽  
Model Parameters ◽  
Modular Multilevel Converter ◽  
Multilevel Converter ◽  
Content Type ◽  
Insulated Gate Bipolar Transistor ◽  
Module Design ◽  
Turn On ◽  
Module Test

Purpose This paper aims to establish the wideband model of a sub-module in a modular multilevel converter (MMC) and analyze the switch transients of the sub-module. Design/methodology/approach The paper builds an MMC sub-module test circuit and conducts dynamic tests both with and without the bypass thyristor. Then, it builds the wideband model of the MMC sub-module and extracts the model parameters. Finally, based on the wideband model, it simulates the switch transients and analyzes the oscillation mechanism. Findings The dynamic testing shows the bypass thyristor will add oscillations during switch transients, especially during the turn-on process. The thyristor acts like a small capacitor and reduces the total capacitor in the turn-on circuit loop, thus causing under-damped oscillations. Originality/value This paper found that the bypass thyristor will influence the MMC sub-module switch transients under certain circumstances. This paper proposes a partial inductance extraction procedure for the MMC sub-module and builds a wideband model of the sub-module. The wideband model is used to analyze and explain the switch transients, and can be further used for insulated gate bipolar transistor switch oscillation inhibition and sub-module design optimization.

Sign in / Sign up

Export Citation Format

Share Document