Thermal index changes by optical absorption in group III-V semiconductor waveguides

1986 ◽  
Vol 4 (10) ◽  
pp. 1482-1493 ◽  
Author(s):  
M. Gabriel ◽  
H. Haus ◽  
E. Ippen
Keyword(s):  
Optical Absorption ◽  
Thermal Index ◽  
Semiconductor Waveguides ◽  
Group Iii ◽  
Index Changes ◽  
Group Iii V Semiconductor

LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTION OF FINITE AND INFINITE SEMI-PARABOLIC QUANTUM WELLS

2011 ◽  
Vol 25 (07) ◽  
pp. 497-507 ◽  
Author(s):  
M. J. KARIMI ◽  
A. KESHAVARZ ◽  
A. POOSTFORUSH
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Optical Absorption ◽  
Quantum Well ◽  
Quantum Wells ◽  
Resonant Peak ◽  
Energy Eigenvalues ◽  
Finite Case ◽  
Infinite Case ◽  
Index Changes

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

2009 ◽  
Vol 1155 ◽  
Author(s):  
Serge Oktyabrsky ◽  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Sergei Koveshnikov ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Interface Layer ◽  
Oxide Interface ◽  
Channel Mobility ◽  
Group Iii ◽  
High K ◽  
Electron Transport Properties ◽  
Group Iii V Semiconductor

AbstractGroup III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012 cm-2.

scholarly journals Synthesis and characterization of group III-V semiconductor clusters: gallium phosphide GaP in zeolite Y

1989 ◽  
Vol 111 (20) ◽  
pp. 8006-8007 ◽  
Author(s):  
J. E. Mac Dougall ◽  
H. Eckert ◽  
G. D. Stucky ◽  
N. Herron ◽  
Y. Wang ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Zeolite Y ◽  
Synthesis And Characterization ◽  
Group Iii ◽  
Semiconductor Clusters ◽  
Group Iii V Semiconductor

INTERSUBBAND OPTICAL ABSORPTION COEFFICIENTS AND REFRACTIVE INDEX CHANGES OF AN ELLIPSOIDAL FINITE POTENTIAL QUANTUM DOT

2010 ◽  
Vol 19 (01) ◽  
pp. 131-143 ◽  
Author(s):  
G. REZAEI ◽  
M. R. K. VAHDANI ◽  
M. BARATI
Keyword(s):  
Refractive Index ◽  
Light Intensity ◽  
Optical Absorption ◽  
Quantum Dot ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient ◽  
Matrix Formalism ◽  
Ellipsoidal Quantum Dot ◽  
Index Changes ◽  
Intersubband Optical Absorption

Intersubband optical absorption coefficient and refractive index changes of a weakly prolate ellipsoidal quantum dot, using the compact-density matrix formalism and iterative method, are investigated. In this regard, the linear and nonlinear intersubband optical absorption coefficient and refractive index changes of a GaAs / Al x Ga 1-x As ellipsoidal quantum dot, as functions of the dot radius, ellipticity constant, stoichiometric ratio and incident light intensity are calculated. The results indicate that absorption coefficient and refractive index changes strongly depend on the light intensity, size and geometry of the dot and structure parameters such as aluminium concentration in GaAs / Al x Ga 1-x As structures.

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