A current-based reference-generation scheme for 1T-1C ferroelectric random-access memories

2003 ◽  
Vol 38 (3) ◽  
pp. 541-549 ◽  
Author(s):  
J.W.K. Siu ◽  
Y. Eslami ◽  
A. Sheikholeslami ◽  
P.G. Gulak ◽  
Toru Endo ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 80011-80016 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuan Zhang ◽  
Xiong Zhang ◽  
...  

Multilevel data ferroelectric storage memory is a breakthrough for addressing low density in ferroelectric random access memories.


MRS Bulletin ◽  
1996 ◽  
Vol 21 (7) ◽  
pp. 33-39 ◽  
Author(s):  
J.F. Scott ◽  
F.M. Ross ◽  
C.A. Paz de Araujo ◽  
M.C. Scott ◽  
M. Huffman

Recently there has been a paradigm shift in nonvolatile computer memories from silicon-technology-based EEPROMs (electrically erasable, programmable read-only memories) to devices in which the stored information is coded into + and − polarizations in thin-film ferroelectric capacitors. Such devices have read and erase/rewrite speeds of the order of 1–35 ns, many orders of magnitude faster than the erase/rewrite speeds of the best EEPROMs (Table I). However, fundamental questions concerning their lifetimes had delayed full commercialization. Because ferroelectrics normally have extremely large dielectric constants, their use as nonswitching capacitors in dynamic random-access memories (DRAMs) is also rapidly evolving. The majority of studies to date have emphasized lead zirconate titanate (PZT)-based capacitors for nonvolatile ferroelectric random-access memories (NVFRAMs) and barium strontium titanate-based capacitor DRAMs (see Table II).


2001 ◽  
Vol 16 (11) ◽  
pp. 3124-3132 ◽  
Author(s):  
Uong Chon ◽  
Hyun M. Jang ◽  
Sun-Hwa Lee ◽  
Gyu-Chul Yi

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.


1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Takeshi Yoshimura ◽  
Daisuke Ito ◽  
Taichiro Ito

AbstractWe have been proposing the use of RMnO3 (R: rare earth elements) films for metalferroelectric- semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (Ferroelectric RAMs). This report describes the progress of YMnO3 and YbMnO3 films for FET type FeRAM application. Although highly (0001)-oriented YMnO3 films are easily obtained on a MgO, ZnO/Sapphire, Pt/Sapphire and Pt/Si substrates, it was very hard to obtain the crystalline films directly on Si or on SiO2/Si substrate. A Y-Mn-O buffer layer improved the crystallinity of the YMnO3 films on Si, and we got the C-V curve with ferroelectric hysteresis. The real ferroelectric component responsible for the C-V hysteresis was calculated to be just 8.4 nC/cm2 by pulse measurements. On the other hand, Y2O3 buffer layer drastically improved the dielectric properties. The window width of the C-V hysteresis does not change by changing the sweep rate and measurement frequency.


MRS Bulletin ◽  
2018 ◽  
Vol 43 (5) ◽  
pp. 340-346 ◽  
Author(s):  
Thomas Mikolajick ◽  
Stefan Slesazeck ◽  
Min Hyuk Park ◽  
Uwe Schroeder

Abstract


2020 ◽  
Vol 75 (3) ◽  
pp. 249-256
Author(s):  
Mukhtar Ahmad ◽  
Rizwan Ali ◽  
Atiq ur Rehman ◽  
Akbar Ali ◽  
Ishrat Sultana ◽  
...  

AbstractMultiferroics with chemical formula BiAlxFe1−xO3 (x = 0, 0.1, 0.2, and 0.3) and substituted by Al are synthesised using sol–gel auto-combustion. The materials are sintered at 500 °C for 5 h. In the ongoing study, the crystal structure of BiAlxFe1−xO3 was investigated by X-ray diffraction. After confirming the rhombohedral single-phase crystal structure, various characterisation techniques, such as scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, elemental mapping images, electrical properties, Fourier transform infrared spectroscopy, and vibrating sample magnetometry (VSM), were used to investigate the synthesised samples. The grain size estimated from SEM images decreased as Al contents increased. Elemental composition was confirmed by EDX spectra. Direct current electrical resistivity increased whereas drift mobility decreased with increasing Al contents. The VSM results of Al-doped BiFeO3 (BFO) demonstrate that BFO crystals with size >60 nm show anti-ferromagnetic behaviour, which is evident in the present study. The increase in Al doping results in an increase in coercivity, as grain size and coercivity are inversely related with each other. This is because of the replacement of Fe3+ by Al3+ ions, which weakens the sub-lattice interactions. It has been observed that BFO materials with such parameters are favourable for ferroelectric random access memories where data can be written electrically and read magnetically.


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