Voltage pulse controlling multilevel data ferroelectric storage memory with a nonepitaxial ultrathin film

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

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Structural and ferroelectric properties of (Bi,Ce)4Ti3O12 thin films grown by pulsed laser deposition for ferroelectric random access memories

Applied Surface Science ◽

10.1016/j.apsusc.2003.11.064 ◽

2004 ◽

Vol 227 (1-4) ◽

pp. 187-192 ◽

Cited By ~ 9

Author(s):

Young-Nam Oh ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Random Access ◽

Pulsed Laser ◽

Laser Deposition ◽

Ferroelectric Random Access Memories

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Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories

MRS Bulletin ◽

10.1557/s0883769400035892 ◽

1996 ◽

Vol 21 (7) ◽

pp. 33-39 ◽

Cited By ~ 160

Author(s):

J.F. Scott ◽

F.M. Ross ◽

C.A. Paz de Araujo ◽

M.C. Scott ◽

M. Huffman

Keyword(s):

Lead Zirconate Titanate ◽

Barium Strontium Titanate ◽

Paradigm Shift ◽

Random Access ◽

Lead Zirconate ◽

Dielectric Constants ◽

Barium Strontium ◽

Stored Information ◽

Ferroelectric Random Access Memories ◽

Ferroelectric Capacitors

Recently there has been a paradigm shift in nonvolatile computer memories from silicon-technology-based EEPROMs (electrically erasable, programmable read-only memories) to devices in which the stored information is coded into + and − polarizations in thin-film ferroelectric capacitors. Such devices have read and erase/rewrite speeds of the order of 1–35 ns, many orders of magnitude faster than the erase/rewrite speeds of the best EEPROMs (Table I). However, fundamental questions concerning their lifetimes had delayed full commercialization. Because ferroelectrics normally have extremely large dielectric constants, their use as nonswitching capacitors in dynamic random-access memories (DRAMs) is also rapidly evolving. The majority of studies to date have emphasized lead zirconate titanate (PZT)-based capacitors for nonvolatile ferroelectric random-access memories (NVFRAMs) and barium strontium titanate-based capacitor DRAMs (see Table II).

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Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

Journal of Materials Research ◽

10.1557/jmr.2001.0431 ◽

2001 ◽

Vol 16 (11) ◽

pp. 3124-3132 ◽

Cited By ~ 33

Author(s):

Uong Chon ◽

Hyun M. Jang ◽

Sun-Hwa Lee ◽

Gyu-Chul Yi

Keyword(s):

Remanent Polarization ◽

Pyrochlore Phase ◽

Random Access ◽

Layered Perovskite ◽

Oriented Growth ◽

Plane Orientation ◽

Amorphous Surface ◽

Ferroelectric Random Access Memories ◽

Large Remanent Polarization ◽

Template Material

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

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Ferroelectric Random Access Memories

10.1007/b12953 ◽

2004 ◽

Cited By ~ 66

Keyword(s):

Random Access ◽

Ferroelectric Random Access Memories

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Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories

2007 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2007.378735 ◽

2007 ◽

Cited By ~ 1

Author(s):

Aly E. Salama ◽

Sherif M. Sharroush ◽

Mahmoud Y. Fekry

Keyword(s):

Random Access ◽

Ferroelectric Random Access Memories

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YMnO3 and YbMnO3 Thin Films for fet type FeRam Application

MRS Proceedings ◽

10.1557/proc-574-237 ◽

1999 ◽

Vol 574 ◽

Cited By ~ 3

Author(s):

Norifumi Fujimura ◽

Takeshi Yoshimura ◽

Daisuke Ito ◽

Taichiro Ito

Keyword(s):

Buffer Layer ◽

Field Effect Transistor ◽

Random Access ◽

Sweep Rate ◽

Si Substrates ◽

Window Width ◽

Crystalline Films ◽

Effect Transistor ◽

Ferroelectric Hysteresis ◽

Ferroelectric Random Access Memories

AbstractWe have been proposing the use of RMnO3 (R: rare earth elements) films for metalferroelectric- semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (Ferroelectric RAMs). This report describes the progress of YMnO3 and YbMnO3 films for FET type FeRAM application. Although highly (0001)-oriented YMnO3 films are easily obtained on a MgO, ZnO/Sapphire, Pt/Sapphire and Pt/Si substrates, it was very hard to obtain the crystalline films directly on Si or on SiO2/Si substrate. A Y-Mn-O buffer layer improved the crystallinity of the YMnO3 films on Si, and we got the C-V curve with ferroelectric hysteresis. The real ferroelectric component responsible for the C-V hysteresis was calculated to be just 8.4 nC/cm2 by pulse measurements. On the other hand, Y2O3 buffer layer drastically improved the dielectric properties. The window width of the C-V hysteresis does not change by changing the sweep rate and measurement frequency.

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