Operation of Pt/AlGaN/GaN-Heterojunction Field-Effect-Transistor Hydrogen Sensors With Low Detection Limit and High Sensitivity

2008 ◽  
Vol 29 (11) ◽  
pp. 1193-1195 ◽  
Author(s):  
Junghui Song ◽  
Wu Lu
2021 ◽  
Vol 54 (24) ◽  
pp. 245401
Author(s):  
Mingyang Ma ◽  
Lemeng Chao ◽  
Yuhang Zhao ◽  
Jiafeng Ding ◽  
Zhongchao Huang ◽  
...  

2018 ◽  
Vol 5 (8) ◽  
pp. 1990-1999 ◽  
Author(s):  
Xiaoyan Chen ◽  
Haihui Pu ◽  
Zipeng Fu ◽  
Xiaoyu Sui ◽  
Jingbo Chang ◽  
...  

A benzyltriethylammonium chloride-modified graphene field-effect transistor sensor has high sensitivity, high selectivity and rapid response for nitrate detection.


Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2280
Author(s):  
Hong Phan T. Nguyen ◽  
Thanihaichelvan Murugathas ◽  
Natalie O. V. Plank

Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. We found limits of detection for adenosine of 100 pM and 320 nM for the 35-mer and 27-mer aptamers, with dissociation constants of 1.2 nM and 160 nM, respectively. Upon analyte recognition the 35-mer adenosine aptamer adopts a compact G-quadruplex structure while the 27-mer adenosine aptamer changes to a folded duplex. Using the CNT FET aptasensor platform adenosine could be detected with high sensitivity over the range of 100 pM to 10 µM, highlighting the suitability of the CNT FET aptasensor platform for high performance adenosine detection. The aptamer restructuring format is critical for high sensitivity with the G-quadraplex aptasensor having a 130-fold smaller dissociation constant than the duplex forming aptasensor.


Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 4042 ◽  
Author(s):  
Salvatore Pullano ◽  
Costantino Critello ◽  
Ifana Mahbub ◽  
Nishat Tasneem ◽  
Samira Shamsir ◽  
...  

Since the 1970s, a great deal of attention has been paid to the development of semiconductor-based biosensors because of the numerous advantages they offer, including high sensitivity, faster response time, miniaturization, and low-cost manufacturing for quick biospecific analysis with reusable features. Commercial biosensors have become highly desirable in the fields of medicine, food, and environmental monitoring as well as military applications, whereas increasing concerns about food safety and health issues have resulted in the introduction of novel legislative standards for these sensors. Numerous devices have been developed for monitoring biological processes such as nucleic acid hybridization, protein–protein interaction, antigen–antibody bonds, and substrate–enzyme reactions, just to name a few. Since the 1980s, scientific interest moved to the development of semiconductor-based devices, which also include integrated front-end electronics, such as the extended-gate field-effect transistor (EGFET) biosensor, one of the first miniaturized chemical sensors. This work is intended to be a review of the state of the art focused on the development of biosensors and chemosensors based on extended-gate field-effect transistor within the field of bioanalytical applications, which will highlight the most recent research reported in the literature. Moreover, a comparison among the diverse EGFET devices will be presented, giving particular attention to the materials and technologies.


2020 ◽  
Vol 20 (7) ◽  
pp. 4404-4408
Author(s):  
June-Heang Choi ◽  
Tuan Anh Vuong ◽  
Hyungtak Kim ◽  
Ho-Young Cha

We have developed a Pd-functionalized hydrogen gas sensor based on a recessed AlGaN/GaN heterostructure field-effect transistor. The AlGaN barrier layer under the Pd catalyst was partially etched to enhance its sensitivity. Both low-power consumption and high sensitivity were achieved by employing a recessed structure. Sensor characterization was carried out at the temperature range from room temperature to 250 °C, among which the best sensing characteristics were observed at 200 °C. A sensitivity of 380% with a response time of 0.25 s was achieved at a bias voltage of 0.3 V at 200 °C under a hydrogen exposure concentration of 4%. The standby power consumption was only 2 μW for the sensing area of 100×28 μm2 due to the low standby current, which was caused by the recessed AlGaN barrier layer.


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