scholarly journals Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell

2014 ◽  
Vol 63 (14) ◽  
pp. 147301
Author(s):  
Pang Hua ◽  
Deng Ning
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY

2016 ◽  
Vol 24 (04) ◽  
pp. 1750048 ◽  
Author(s):  
HONGXIA LI ◽  
YIMING Chen ◽  
XIN WU ◽  
JUNHUA XI ◽  
YANWEI HUANG ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Flash Memory ◽  
Thermal Evaporation ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zno Films ◽  
Access Memory ◽  
Vacuum Thermal Evaporation ◽  
Resistive Switching Mechanism

Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3367-3372 ◽  
Author(s):  
Takumi Moriyama ◽  
Takahiro Yamasaki ◽  
Takahisa Ohno ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Side Surface ◽  
Resistive Random Access Memory ◽  
First Principles Calculation ◽  
Access Memory ◽  
Switching Mechanism ◽  
Conducting Path

ABSTRACTFor practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM

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