Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

2011 ◽  
Vol 29 (1) ◽  
pp. 01AD03 ◽  
Author(s):  
A. Makarov ◽  
V. Sverdlov ◽  
S. Selberherr
Keyword(s):  
Monte Carlo ◽  
Stochastic Model ◽  
Monte Carlo Simulations ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

2014 ◽  
Vol 105 (22) ◽  
pp. 223514 ◽  
Author(s):  
Tian-Jian Chu ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ion Accumulation ◽  
Access Memory ◽  
Nitrogen Doped ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Resistive Switching Mechanism

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY

2016 ◽  
Vol 24 (04) ◽  
pp. 1750048 ◽  
Author(s):  
HONGXIA LI ◽  
YIMING Chen ◽  
XIN WU ◽  
JUNHUA XI ◽  
YANWEI HUANG ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Flash Memory ◽  
Thermal Evaporation ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zno Films ◽  
Access Memory ◽  
Vacuum Thermal Evaporation ◽  
Resistive Switching Mechanism

Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3367-3372 ◽  
Author(s):  
Takumi Moriyama ◽  
Takahiro Yamasaki ◽  
Takahisa Ohno ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Side Surface ◽  
Resistive Random Access Memory ◽  
First Principles Calculation ◽  
Access Memory ◽  
Switching Mechanism ◽  
Conducting Path

ABSTRACTFor practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory

2011 ◽  
Vol 14 (2) ◽  
pp. H103 ◽  
Author(s):  
Shih-Cheng Chen ◽  
Ting-Chang Chang ◽  
Shih-Yang Chen ◽  
Hung-Wei Li ◽  
Yu-Ting Tsai ◽  
...  
Keyword(s):  
Chromium Oxide ◽  
Carrier Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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