Study and Application of In-Situ Phosphorus Doped Thick Polysilicon Films at Low Temperature for Post CMOS-MEMS Integration

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

Download Full-text

Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.51-52.379 ◽

1996 ◽

Vol 51-52 ◽

pp. 379-384 ◽

Cited By ~ 1

Author(s):

F. Le Bihan ◽

B. Fortin ◽

H. Lhermite ◽

O. Bonnaud ◽

D. Briand

Keyword(s):

Experimental Determination ◽

Hall Factor ◽

Polysilicon Films ◽

Phosphorus Doped

Download Full-text

Microstructures of Polysilicon

MRS Proceedings ◽

10.1557/proc-106-27 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 4

Author(s):

R. Sinclair ◽

A. H. Carim ◽

J. Morgiel ◽

J. C. Bravman

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Polycrystalline Silicon ◽

Transmission Electron ◽

Polysilicon Films ◽

In Situ Heating ◽

Phosphorus Doped ◽

Microstructural Studies

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.

Download Full-text

The structure, morphology and resistivity of in situ phosphorus doped polysilicon films

Thin Solid Films ◽

10.1016/0040-6090(94)90793-5 ◽

1994 ◽

Vol 247 (2) ◽

pp. 156-161 ◽

Cited By ~ 8

Author(s):

V.P Lesnikova ◽

A.S Turtsevich ◽

V.Y Krasnitsky ◽

V.A Emelyanov ◽

O.Y Nalivaiko ◽

...

Keyword(s):

Structure Morphology ◽

Polysilicon Films ◽

Phosphorus Doped

Download Full-text

Electrical conductivity behaviour of thin in situ phosphorus doped VLPCVD polysilicon films

Materials Chemistry and Physics ◽

10.1016/0254-0584(93)90106-v ◽

1993 ◽

Vol 33 (1-2) ◽

pp. 145-149

Author(s):

M. Mokhtari ◽

B. Fortin ◽

O. Bonnaud ◽

A. Liba ◽

M. Sarret

Keyword(s):

Electrical Conductivity ◽

Polysilicon Films ◽

Conductivity Behaviour ◽

Phosphorus Doped

Download Full-text

Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

Thin Solid Films ◽

10.1016/s0040-6090(00)00803-8 ◽

2000 ◽

Vol 369 (1-2) ◽

pp. 185-188

Author(s):

Kyu-Hwan Shim ◽

Hong-Seung Kim ◽

Jeong-Yong Lee ◽

Jin-Yeoung Kang ◽

Min Kyu Song

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Silicon Films ◽

Temperature Growth ◽

Low Temperature Growth ◽

Doped Silicon ◽

Step Growth ◽

Phosphorus Doped

Download Full-text

Low-temperature crystallization of in situ phosphorus-doped low-pressure chemical-vapour deposited amorphous silicon

Canadian Journal of Physics ◽

10.1139/p87-168 ◽

1987 ◽

Vol 65 (8) ◽

pp. 1030-1032 ◽

Cited By ~ 3

Author(s):

D. Waechter ◽

N. G. Tarr

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour ◽

Chemical Vapor ◽

Low Pressure ◽

Phosphorus Concentration ◽

Pressure Chemical ◽

Polysilicon Films ◽

Phosphorus Doped ◽

Secondary Ion

A method has been developed for producing low-resistivity phosphorus-doped polysilicon films with a minimum thermal budget. The method involves low-pressure chemical-vapor deposition of amorphous silicon at 560 °C followed by crystallization at 650 °C. Films formed in this manner are compared to films deposited polycrystalline at 627 °C. In both cases, in situ doping is achieved by addition of PH3 diluted in SiH4 to the gas mixture. For a given SiH4: PH3 flow ratio, the phosphorus concentration determined from secondary-ion mass spectroscopy is four times larger in the amorphous-deposited material. Moreover, the resistivity is substantially lower in this material even when the dopant concentrations are similar. The latter result may be due in part to reduced dopant segregation to grain boundaries. The internal strain determined from the Raman line width is larger in the polycrystalline-deposited material but could be reduced by high-temperature annealing.

Download Full-text

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100113913 ◽

1975 ◽

Vol 33 ◽

pp. 58-59

Author(s):

F. H. Louchet ◽

L. P. Kubin

Keyword(s):

Electron Microscope ◽

Transition Temperature ◽

Low Temperature ◽

Slip System ◽

Low Temperatures ◽

Tensile Axis ◽

Image Intensifier ◽

Screw Dislocations ◽

Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Download Full-text