A novel n+-polysilicon on n-silicon iso-type diode

1996 ◽  
Vol 74 (S1) ◽  
pp. 186-188
Author(s):  
S. Mohajerzadeh ◽  
C. R. Selvakumar
Keyword(s):  
Energy Barrier ◽  
Exponential Behavior ◽  
Si Substrates ◽  
Current Voltage ◽  
Polysilicon Films ◽  
Current Voltage Characteristics ◽  
Film Substrate ◽  
Phosphorus Doped

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

scholarly journals Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-123-C3-130
Author(s):  
A. TOUNSI ◽  
E. SCHEID ◽  
C. AZZARO ◽  
P. DUVERNEUIL ◽  
J. P. COUDERC
Keyword(s):  
Process Modelling ◽  
Polysilicon Films ◽  
Phosphorus Doped

Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

2007 ◽  
Vol 997 ◽  
Author(s):  
Manuel Villafuerte ◽  
Silvia P. Heluani ◽  
Gabriel Juárez ◽  
David Comedi ◽  
Gabriel Braunstein ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Electrical Contacts ◽  
X Ray Diffraction ◽  
Semiconductor Interface ◽  
Si Substrates ◽  
Barrier Heights ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Terminal Structure ◽  
Gap States

AbstractN-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films

1996 ◽  
Vol 51-52 ◽  
pp. 379-384 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
H. Lhermite ◽  
O. Bonnaud ◽  
D. Briand
Keyword(s):  
Experimental Determination ◽  
Hall Factor ◽  
Polysilicon Films ◽  
Phosphorus Doped
Sign in / Sign up

Export Citation Format

Share Document