High frequency noise simulations of MOSFET's short channel effects using PSpice

2003 ◽  
Author(s):  
H. Fouad ◽  
E. El-Diwany ◽  
K. Sharaf ◽  
H. El-Hennawy
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Short Channel Effects ◽  
Short Channel ◽  
High Frequency Noise ◽  
Channel Effects

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 613-616
Author(s):  
Tomoyasu Ishii ◽  
Shinichiro Kuroki ◽  
Hiroshi Sezaki ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Threshold Voltage ◽  
High Frequency ◽  
Short Channel Effects ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Channel Effects ◽  
Trench Structure ◽  
High Frequency Operation

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

scholarly journals Review of CMOS Amplifiers for High Frequency Applications

2020 ◽  
Vol 10 (2) ◽  
pp. 175-180
Keyword(s):  
Power Consumption ◽  
High Frequency ◽  
High Speed ◽  
Short Channel Effects ◽  
Performance Parameters ◽  
Short Channel ◽  
Channel Effects ◽  
High Bandwidth ◽  
Cmos Amplifier ◽  
User Friendly

The headway in electronics technology proffers user-friendly devices. The characteristics such as high integration, low power consumption, good noise immunity are the significant benefits that CMOS offer, paying many challenges simultaneously with it. The short channel effects and presence of parasitic which prevent speed pose questions on the performance parameters. A great sort of works has done by many groups in the design of the CMOS amplifier for high-frequency applications to discuss the parameters such as power consumption, high bandwidth, high speed and linearity trade-off to obtain an optimized output. A lot of amplifier topologies are experimented and discussed in the literature with its design and simulation. In this paper, the various efforts associated with CMOS amplifier circuit for high-frequency applications are studying extensively.

Optimization of SiC MESFET for High Power and High Frequency Applications

2011 ◽  
Vol 679-680 ◽  
pp. 629-632 ◽  
Author(s):  
Niclas Ejebjörk ◽  
Herbert Zirath ◽  
Peder Bergman ◽  
Björn Magnusson ◽  
Niklas Rorsman
Keyword(s):  
Aspect Ratio ◽  
High Power ◽  
High Frequency ◽  
Current Gain ◽  
Short Channel Effects ◽  
Maximum Frequency ◽  
Power Performance ◽  
Short Channel ◽  
Maximum Current ◽  
Channel Effects

SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×1017 cm-3 in the channel and the second type has higher doping (5×1017 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Case study: Simulation and control of high frequency noise for commercial vehicle cab considering leak

2019 ◽  
Vol 67 (4) ◽  
pp. 315-329
Author(s):  
Rongjiang Tang ◽  
Zhe Tong ◽  
Weiguang Zheng ◽  
Shenfang Li ◽  
Li Huang
Keyword(s):  
High Frequency ◽  
Commercial Vehicle ◽  
Frequency Noise ◽  
High Frequency Noise ◽  
Simulation And Control ◽  
And Control

Aerodynamic noise from an asymmetric airfoil with perforated extension plates at the trailing edge

2020 ◽  
pp. 1475472X2097838
Author(s):  
CK Sumesh ◽  
TJS Jothi
Keyword(s):  
High Frequency ◽  
Sound Pressure ◽  
Pore Diameter ◽  
Low Frequency ◽  
Aerodynamic Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Trailing Edge ◽  
High Frequency Noise ◽  
Displacement Thickness

This paper investigates the noise emissions from NACA 6412 asymmetric airfoil with different perforated extension plates at the trailing edge. The length of the extension plate is 10 mm, and the pore diameters ( D) considered for the study are in the range of 0.689 to 1.665 mm. The experiments are carried out in the flow velocity ( U∞) range of 20 to 45 m/s, and geometric angles of attack ( αg) values of −10° to +10°. Perforated extensions have an overwhelming response in reducing the low frequency noise (<1.5 kHz), and a reduction of up to 6 dB is observed with an increase in the pore diameter. Contrastingly, the higher frequency noise (>4 kHz) is observed to increase with an increase in the pore diameter. The dominant reduction in the low frequency noise for perforated model airfoils is within the Strouhal number (based on the displacement thickness) of 0.11. The overall sound pressure levels of perforated model airfoils are observed to reduce by a maximum of 2 dB compared to the base airfoil. Finally, by varying the geometric angle of attack from −10° to +10°, the lower frequency noise is seen to increase, while the high frequency noise is observed to decrease.

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