Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

Download Full-text

Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices

MRS Proceedings ◽

10.1557/proc-0912-c01-05 ◽

2006 ◽

Vol 912 ◽

Author(s):

Benjamin Dumont ◽

Arnaud Pouydebasque ◽

Bartek Pawlak ◽

Benjamin Oudet ◽

Dominique Delille ◽

...

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Short Channel Effect ◽

Drive Current ◽

Enhanced Diffusion ◽

Channel Effect ◽

Interstitial Defects ◽

Shallow Junctions ◽

Channel Effects ◽

Large Improvement

AbstractThis work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.

Download Full-text

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.904476 ◽

2007 ◽

Vol 54 (10) ◽

pp. 2589-2597 ◽

Cited By ~ 182

Author(s):

Gregg H. Jessen ◽

Robert C. Fitch ◽

James K. Gillespie ◽

Glen Via ◽

Antonio Crespo ◽

...

Keyword(s):

High Frequency ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Gan Hemts ◽

High Frequency Operation

Download Full-text

Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

MRS Proceedings ◽

10.1557/proc-640-h4.6 ◽

2000 ◽

Vol 640 ◽

Author(s):

A. Konstantinov ◽

A-M. Saroukhan ◽

S. Karlsson ◽

C. Harris ◽

A. Litwin

Keyword(s):

Silicon Carbide ◽

The Other ◽

Gate Length ◽

Short Channel Effects ◽

Short Channel ◽

Short Channel Effect ◽

Turn On ◽

Channel Effect ◽

Blocking Voltage ◽

Channel Effects

ABSTRACTWe demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theoretically expected value for an ideal device. Tradeoffs are shown to exist between optimum gate length and on-state current on one hand, and the maximum blocking voltage on the other hand. Composite p-buffers with an elevated doping in the vicinity of the active layer considerably increase the operation voltage. Silicon carbide MESFETs utilizing composite buffers are reported.

Download Full-text

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0106 ◽

2012 ◽

Author(s):

Yuk L. Tsang ◽

Xiang D. Wang ◽

Reyhan Ricklefs ◽

Jason Goertz

Keyword(s):

Threshold Voltage ◽

Electrical Characterization ◽

Cmos Technology ◽

Short Channel ◽

Visual Defect ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

Download Full-text

A compact quasi 3D threshold voltage modeling and performance analysis of a novel linearly graded binary metal alloy quadruple gate MOSFET for subdued short channel effects

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.01.035 ◽

2015 ◽

Vol 82 ◽

pp. 293-302 ◽

Cited By ~ 16

Author(s):

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Threshold Voltage ◽

Metal Alloy ◽

Short Channel Effects ◽

Short Channel ◽

Binary Metal ◽

Channel Effects ◽

And Performance

Download Full-text

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

MRS Proceedings ◽

10.1557/proc-568-213 ◽

1999 ◽

Vol 568 ◽

Cited By ~ 1

Author(s):

M.E. Rubin ◽

S. Saha ◽

J. Lutze ◽

F. Nouri ◽

G. Scott ◽

...

Keyword(s):

Threshold Voltage ◽

Recombination Rate ◽

Gate Oxide ◽

Two Dimensional ◽

Short Channel ◽

Short Channel Effect ◽

Mos Capacitor ◽

Enhanced Diffusion ◽

Channel Effect ◽

Additional Nitrogen

ABSTRACTExperiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

Download Full-text

High frequency noise simulations of MOSFET's short channel effects using PSpice

Proceedings of the Nineteenth National Radio Science Conference ◽

10.1109/nrsc.2002.1022655 ◽

2003 ◽

Author(s):

H. Fouad ◽

E. El-Diwany ◽

K. Sharaf ◽

H. El-Hennawy

Keyword(s):

High Frequency ◽

Frequency Noise ◽

Short Channel Effects ◽

Short Channel ◽

High Frequency Noise ◽

Channel Effects

Download Full-text

Short gate length AlGaN/GaN HEMTs

MRS Proceedings ◽

10.1557/proc-622-t6.29.1 ◽

2000 ◽

Vol 622 ◽

Author(s):

O. Breitschädel ◽

L. Kley ◽

H. Gräbeldinger ◽

B. Kuhn ◽

F. Scholz ◽

...

Keyword(s):

High Frequency ◽

Device Performance ◽

Gate Length ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Gan Hemts ◽

Output Characteristics ◽

Frequency Behavior ◽

Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Download Full-text