A compact high current system for short circuit testing of smart power switches according to AEC standard Q100-012

2008 ◽  
Author(s):  
Michael Glavanovics ◽  
Roland Sleik ◽  
Christoph Schreiber
Keyword(s):  
Current System ◽  
Short Circuit ◽  
High Current ◽  
Circuit Testing ◽  
Smart Power ◽  
Power Switches

Current modeling in a bus packet of a high-current system

2020 ◽  
pp. 40-44
Author(s):  
T.A. Novozhilov ◽  
A.N. Novozhilov ◽  
D.M. Rahimberdinova
Keyword(s):  
Mathematical Model ◽  
Single Phase ◽  
Current System ◽  
Short Circuit ◽  
High Current ◽  
Furnace Transformer ◽  
Simulation Error ◽  
Flexible Connections ◽  
Split Winding ◽  
Secondary Winding

A graphoanalytic method for determining the highcurrent system resistances and a mathematical model of a single-phase furnace transformer with a split secondary winding are developed for modeling currents in a transformer and a high-current system bus package in case of short circuit and opening of flexible connections. Experiments have proved the adequacy of the proposed method. The simulation error does not exceed 10 %. Keywords: single-phase transformer, split winding, short circuit, high-current system, opening, resistance, mathematical model, modeling. [email protected]

Prospective Transient Recovery Voltage Measurement of Short Circuit Testing Circuit by Reverse Current Injection

2019 ◽  
Vol 139 (8) ◽  
pp. 522-526
Author(s):  
Kyoya Nonaka ◽  
Tadashi Koshizuka ◽  
Eiichi Haginomori ◽  
Hisatoshi Ikeda ◽  
Takeshi Shinkai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Reverse Current ◽  
Current Injection ◽  
Voltage Measurement ◽  
Circuit Testing ◽  
Transient Recovery Voltage ◽  
Recovery Voltage

scholarly journals Post-Arc Characteristics of High-Current Arcs in Vacuum Circuit-Breakers

2019 ◽  
Vol 6 (2) ◽  
pp. 170-174
Author(s):  
N. Wenzel ◽  
W. Haas
Keyword(s):  
Short Circuit ◽  
Early Period ◽  
Metal Vapor ◽  
Transverse Magnetic ◽  
High Current ◽  
Electric Resistance ◽  
Circuit Breakers ◽  
Arc Characteristics ◽  
Current Zero ◽  
Short Circuit Currents

The post-arc (PA) characteristics of vacuum arcs in transverse magnetic field contacts are studied for short-circuit currents of up to 123 kA peak and transient recovery voltages below 875 V. The measured PA currents are interpreted in terms of an Electric Resistance Model and the models of Andrews-Varey, Langmuir-Child, and Slepian-Schmelzle. Whereas in the late PA period, the calculations do not agree well with the measurements, the PA behavior is well described in the early period after current-zero. It is concluded that the PA discharge is amplified by ionization of metal vapor particles in the boundary sheath due to electron impact.

scholarly journals DESIGN AND TECHNOLOGICAL FEATURES OF CERAMIC-METAL TO-247 AND TO-220 SEMICONDUCTOR PACKAGES

2020 ◽  
Vol 257 (2) ◽  
pp. 22-27
Author(s):  
V.A. Sidorov ◽  
A.G. Chuprunov ◽  
S.V. Kataev ◽  
K.V. Sidorov
Keyword(s):  
Pulsed Current ◽  
Operating Voltage ◽  
Smart Power ◽  
Power Switches ◽  
Semiconductor Packages ◽  
Glass Metal

In this paper we introduce the design of sealed ceramic-metal TO-247 and TO-220 packages, which are intended for the same applications as plactic-metal and glass-metal alternatives. Packages could be used for epitaxial Si and SiC multi-die assemblies, for GaN smart power switches, etc., with operating voltage up to 2500 V and pulsed current up to 350 A.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

Methodology to Quantify Impact of Package Delamination on Performance of High-Side Smart Power Switch Design

2020 ◽  
Vol 2020 (1) ◽  
pp. 000015-000020
Author(s):  
Min Chu ◽  
Jie Chen ◽  
Abidur Rahman ◽  
Rajen Murugan
Keyword(s):  
Electrical Performance ◽  
Diagnostic Feature ◽  
Electromagnetic Modeling ◽  
Smart Power ◽  
Modeling Methodology ◽  
Power Switch ◽  
High Side ◽  
Die Attach ◽  
Power Switches ◽  
The Impact

Abstract Generally, IC packages with exposed pads have excellent thermal and electrical performance – assuming high fidelity and integrity of die attach material. However, reliability challenges associated with die attach impacts electrical performance of vertical power FETs for high-side power switches. As such, it is critical to quantify the impact of these challenges on high-side power switches operation, so that their protection and diagnostic feature circuitries can be properly designed for mission critical applications. In this paper we present on a package and PCB co-modeling methodology that was developed to assess impact of die attach integrity on performance of high-side power switch designs. We explain how electrical co-optimization of the system (viz. FET-Package-PCB) interactions, was achieved through a coupled circuit-to-electromagnetic modeling, simulation, and analysis methodology. Silicon laboratory measurements data that validate the modeling methodology will be presented.

scholarly journals 14C AMS Measurements of <100 μG Samples with a High-Current System

Radiocarbon ◽  
1997 ◽  
Vol 40 (1) ◽  
pp. 247-253 ◽  
Author(s):  
Karl F. Von Reden ◽  
Ann P. McNichol ◽  
Ann Pearson ◽  
Robert J. Schneider
Keyword(s):  
Current System ◽  
Ion Beam ◽  
Beam Current ◽  
Small Sample ◽  
Small Samples ◽  
High Current ◽  
Beam Optics ◽  
Woods Hole Oceanographic Institution ◽  
Factors Affecting ◽  
The Past

The NOSAMS facility at Woods Hole Oceanographic Institution has started to develop and apply techniques for measuring very small samples on a standard Tandetron accelerator mass spectrometry (AMS) system with high-current hemispherical Cs sputter ion sources. Over the past year, results on samples ranging from 7 to 160 μg C showed both the feasibility of such analyses and the present limitations on reducing the size of solid carbon samples. One of the main factors affecting the AMS results is the dependence of a number of the beam optics parameters on the extracted ion beam current. The extracted currents range from 0.5 to 10 μA of 12C− for the sample sizes given above. We here discuss the setup of the AMS system and methods for reliable small-sample measurements and give the AMS-related limits to sample size and the measurement uncertainties.

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