The impact of process optimization on planar THz-Schottky device reliability

Author(s):  
B. Mottet ◽  
C. Sydlo ◽  
B. Kogel ◽  
Q. de Robillard ◽  
O. Cojocari ◽  
...  
2016 ◽  
Vol 2016 (1) ◽  
pp. 000227-000233 ◽  
Author(s):  
Varughese Mathew ◽  
Sheila Chopin ◽  
Oliver Chyan ◽  
Nick Ross ◽  
Alex Lambert ◽  
...  

Abstract Corrosion of aluminum bond pads in wirebonded packages can lead to device reliability issues under the harsh conditions in automotive applications. Corroded Al (aluminum) surface forms a mud-crack type appearance with a relatively very thick aluminum oxide/hydroxide (> 0.1μm) compared to thin protective native aluminum oxide (< 7nm). Various factors contributing to the formation of mud-crack type corrosion are identified. In all cases of mud-crack corrosion observed for packaged devices, Cl (chlorine) was detected on the corroded Al pad. The corrosive impact of high levels of Cl on the Al pad resulting in thick aluminum oxide growth will be discussed. The concentration levels of Cl to form mud-crack corrosion is far beyond the level of ionizable Cl typically present in packaging materials (such as mold compound or organic die attach) so the source of high levels of Cl is due to foreign contamination. The effect of Cl on mud-crack corrosion depends on other factors including pH and applied bias voltage. Corrosion susceptibility is found to be significantly reduced, even in the presence of high levels of Cl, when the pH > 6 and close to the neutral value of a pH of 7. It was also found that Cl is not essential to form mud-crack corrosion. Conditions leading to the corrosion in the absence of Cl are presented. F (fluorine) is a known contaminant in semiconductor processing and its influence on Al pad corrosion is examined. The differences on the impact of F vs. Cl on mud-crack corrosion will be discussed. Corrosion was observed irrespective of the wirebonds in the package (gold (Au) or copper (Cu)). However, the type of bi-metallic contact influences the extent of corrosion. The impact of bi-metallic contact on the mud-crack corrosion will be presented.


2007 ◽  
Vol 990 ◽  
Author(s):  
Qingyun Chen ◽  
Jun Liu ◽  
Elizabeth Walker ◽  
Richard Hurtubise ◽  
Daniel Stritch ◽  
...  

ABSTRACTPinhole densities of electroless cobalt alloy films on copper substrate are characterized using optical and electrochemical methods. The impact of pits or pinholes on deposit film barrier property is discussed. The improved film barrier property is shown by reduction of pits formation through deposition process optimization.


2009 ◽  
Vol 145-146 ◽  
pp. 315-318 ◽  
Author(s):  
Tomoko Suzuki ◽  
Atsushi Otake ◽  
Tomoko Aoki

At 32nm and below the integration of extreme low-k dielectrics (ELK) with a permittivity of 2.2 or lower will require considerable process optimization at etch and clean to maintain critical dimension (CD) and effective k. Of equal concern is the impact on yield and reliability of lateral Cu etch or incomplete removal of copper oxides (CuOx) during post etch residue (PER) cleaning. These are not new issues but the challenges of solving them in the presence of ELK’s are considerable not least in relation to the question of selectivity towards “damaged low k” interfaces, often described as densified or C depleted layers.


Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 598
Author(s):  
Yuan Zou ◽  
Jue Wang ◽  
Hongyi Xu ◽  
Hengyu Wang

In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench SiC MOSFETs, failure modes are gate failure at lower dc bus voltages and thermal runaway at higher dc bus voltages, while failure modes for asymmetric trench SiC MOSFETs are soft failure and thermal runaway, respectively. The shortcircuit withstanding time (SCWT) of the asymmetric trench MOSFET is higher than that of the double trench MOSFETs. The thermal and mechanical stresses inside the devices during the short-circuit tests have been simulated to probe into the failure mechanisms and reveal the impact of the device structures on the device reliability. Finally, post-failure analysis has been carried out to verify the root causes of the device failure.


2019 ◽  
Vol 2 (1) ◽  
pp. 16
Author(s):  
Huifei Wang

This paper discusses the impact of emergency care process optimization on the rescue efficiency of emergency patients. Methods: 102 cases of emergency patients received from January 2017 to February 2018 in our hospital were selected as research objects. According to the order of treatment, they were divided into control group and observation group. The routine nursing process was given to the control group, and the observation group was given an optimized nursing process to compare the rescue efficiency and nursing satisfaction of the two groups. Results: According to the results of the study, the nursing satisfaction of the two groups was compared. Among them, the total satisfaction of the observation group was 49, accounting for 96.07%; the control group was very satisfied with the nursing work, accounting for 82.35%. There was a significant difference in nursing satisfaction between the two groups, which was statistically significant (P<0.05). Comparing the rescue efficiency of the two groups of patients, the observation time, rescue time, infusion time and disease remission time were significantly lower than the control group, the rescue success rate was 94.11%, and the rescue success rate of the control group was 78.43%. The results have statistical significance (P < 0.05). Conclusion: The optimization of emergency nursing process can greatly improve the rescue efficiency of emergency patients, reduce the disability rate and mortality, improve the quality of nursing, and enhance the satisfaction of nursing. It is worthy of clinical promotion practice.


2001 ◽  
Author(s):  
Stephen Hsu ◽  
Xuelong Shi ◽  
Robert J. Socha ◽  
J. Fung Chen ◽  
Jason C. Yee ◽  
...  

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