Effects of Background Doping Concentration on ESD Protection Properties of High Voltage Operation Extended Drain N-Type MOSFET Device

2007 ◽  
Author(s):  
Kil-Ho Kim ◽  
Won-Jae Choi ◽  
Yong-Jin Seo
Keyword(s):  
High Voltage ◽  
Doping Concentration ◽  
Esd Protection ◽  
Background Doping

Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design

2018 ◽  
Vol 924 ◽  
pp. 361-364 ◽  
Author(s):  
Yi Fan Jiang ◽  
B. Jayant Baliga ◽  
Alex Q. Huang
Keyword(s):  
High Voltage ◽  
Doping Concentration ◽  
Secondary Electron ◽  
Electric Field Distribution ◽  
Simulation Tool ◽  
Edge Termination ◽  
Interface Charge ◽  
Aluminum Ions ◽  
Background Doping ◽  
Tcad Simulation

This paper presents the analysis of Aluminum profile implanted into 4H-SiC with low background doping concentration. A strong lateral straggling effect was discovered with secondary electron potential contrast (SEPC) method, and analyzed by Sentaurus Monto Carlo simulations. The effect of lateral straggling was included in the edge termination design using Sentaurus TCAD simulation tool, and the results are compared with design not including the lateral straggling effect. The effect of interface charge on the electric field distribution and breakdown voltage of different 10 kV device edge termination designs was compared and analyzed.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

ESD protection for high voltage LDMOS with sense FET

2002 ◽  
Author(s):  
Y.S. Choi ◽  
J.J. Kim ◽  
C.K. Jeon ◽  
M.H. Kim ◽  
S.L. Kim ◽  
...  
Keyword(s):  
High Voltage ◽  
Esd Protection

Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch

2019 ◽  
Vol 2019 (1) ◽  
pp. 000051-000055
Author(s):  
Rameen Hadizadeh ◽  
Anssi Laitinen ◽  
Niko Kuusniemi ◽  
Volker Blaschke ◽  
David Molinero ◽  
...  
Keyword(s):  
High Voltage ◽  
Microelectromechanical Systems ◽  
Performance Metrics ◽  
Circuit Board ◽  
Low Density ◽  
Rf Switch ◽  
Tunable Capacitor ◽  
Esd Protection ◽  
Mems Device ◽  
The Impact

Abstract Using Low-Density Fan-Out (LDFO) packaging technology, a radio frequency (RF) microelectromechanical systems (MEMS) tunable capacitor array composed of electrostatically actuated beams on 180nm high-voltage CMOS silicon was heterogeneously integrated with a single-pole four-terminal (SP4T) RF switch on 180nm CMOS silicon-on-insulator (SOI). The primary objective of this study was to determine the manufacturability of this System-in-Package (SiP) design, which is proven at time zero through survival of the MEMS device based on acceptable MEMS performance metrics. In addition, the RF SOI switch provides high-voltage electrostatic discharge (ESD) protection for the MEMS device. Capacitive MEMS structures are particularly sensitive to unpredictable electrostatic charging scenarios, such as handling after package assembly and printed circuit board (PCB) surface mount processing. Consequently, resistance to dielectric breakdown by means of robust ESD protection is a very desirable quality. Integrating the RF switch in close proximity with the MEMS device not only enables the ability to withstand charging scenarios in excess of 1kV (human body model), it mitigates the impact of parasitics on RF performance by minimizing interconnect lengths and complexity.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

2019 ◽  
Vol 66 (7) ◽  
pp. 2884-2891 ◽  
Author(s):  
Da-Wei Lai ◽  
Gijs de Raad ◽  
Stephen Sque ◽  
Wim Peters ◽  
Theo Smedes
Keyword(s):  
High Voltage ◽  
Protection Device ◽  
Esd Protection ◽  
Fast Transient
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