Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design

2018 ◽  
Vol 924 ◽  
pp. 361-364 ◽  
Author(s):  
Yi Fan Jiang ◽  
B. Jayant Baliga ◽  
Alex Q. Huang
Keyword(s):  
High Voltage ◽  
Doping Concentration ◽  
Secondary Electron ◽  
Electric Field Distribution ◽  
Simulation Tool ◽  
Edge Termination ◽  
Interface Charge ◽  
Aluminum Ions ◽  
Background Doping ◽  
Tcad Simulation

This paper presents the analysis of Aluminum profile implanted into 4H-SiC with low background doping concentration. A strong lateral straggling effect was discovered with secondary electron potential contrast (SEPC) method, and analyzed by Sentaurus Monto Carlo simulations. The effect of lateral straggling was included in the edge termination design using Sentaurus TCAD simulation tool, and the results are compared with design not including the lateral straggling effect. The effect of interface charge on the electric field distribution and breakdown voltage of different 10 kV device edge termination designs was compared and analyzed.

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 120-125
Author(s):  
Ling Sang ◽  
Li Xin Tian ◽  
Fei Yang ◽  
Jing Hua Xia ◽  
Rui Jin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Design Methodology ◽  
Electric Field Distribution ◽  
Multiplication Factor ◽  
Edge Termination ◽  
Region Division ◽  
Simulation Results ◽  
Uniform Ring ◽  
Linear Increment

Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.

scholarly journals О защите высоковольтных мезаструктурных 4H-SiC-приборов от поверхностного пробоя: прямая фаска

2020 ◽  
Vol 54 (2) ◽  
pp. 207
Author(s):  
Н.М. Лебедева ◽  
Н.Д. Ильинская ◽  
П.А. Иванов
Keyword(s):  
Numerical Simulation ◽  
Silicon Carbide ◽  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Edge Termination ◽  
Protection Method

Abstract The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased mesa-epitaxial p ^+– p – n _0– n ^+ 4 H -SiC diodes is performed. It is shown that negative beveling with small angles of less than 10° from the plane of the p – n _0 junction makes it possible to reduce severalfold the surface edge electric field as compared to that in the bulk. A combined protection method is suggested as the edge-termination technique for 4 H -SiC diodes with a p ^+– n _0– n ^+ structure, Schottky diodes with an n _0 blocking base, and bipolar n ^+– p – n _0 transistors via the implantation of boron along with negative beveling. The possibility of fabricating mesa structures with inclined walls via the photolithography and dry etching of silicon carbide is briefly discussed.

scholarly journals Analysis of Electric Field and Current Density for Different Electrode Configuration of XLPE Insulation

2018 ◽  
Vol 7 (3.36) ◽  
pp. 127 ◽  
Author(s):  
Nishanthi Sunthrasakaran ◽  
Nor Akmal Mohd Jamail ◽  
Qamarul Ezani Kamarudin ◽  
Sujeetha Gunabalan
Keyword(s):  
Electric Field ◽  
Power System ◽  
Field Distribution ◽  
High Voltage ◽  
Current Density ◽  
Electric Field Distribution ◽  
Electrical Power ◽  
High Electric Field ◽  
Electrode Configuration ◽  
Maximum Electric Field

The most important aspect influencing the circumstance and characteristics of electrical discharges is the distribution of electric field in the gap of electrodes. The study of discharge performance requires details on the variation of maximum electric field around the electrode. In electrical power system, the insulation of high voltage power system usually subjected with high electric field. The high electric field causes the degradation performance of insulation and electrical breakdown start to occur. Generally, the standard sphere gaps widely used for protective device in electrical power equipment. This project is study about the electric field distribution and current density for different electrode configuration with XLPE barrier. Hence, the different electrode configuration influences the electric field distribution. This project mainly involves the simulation in order to evaluate the maximum electric field for different electrode configuration. Finite Element Method (FEM) software has been used in this project to perform the simulation. This project also discusses the breakdown characteristics of the XLPE. The accurate evaluation of electric field distribution and maximum electric field is an essential for the determination of discharge behavior of high voltage apparatus and components. The degree of uniformity is very low for pointed rod-plane when compared to other two electrode configurations. The non- uniform electric distribution creates electrical stress within the surface of dielectric barrier. As a conclusion, when the gap distance between the electrodes increase the electric field decrease.  

Inhibiting Effect of Nonlinear Shielding Layer on Electrical Tree Propagation inside Insulation Layer of High-Voltage Cable

2014 ◽  
Vol 989-994 ◽  
pp. 1273-1277
Author(s):  
Chang Ming Li ◽  
Bao Zhong Han ◽  
Long Zhao ◽  
Chun Peng Yin
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Uniform Electric Field ◽  
Insulation Layer ◽  
Breakdown Time ◽  
Electrical Tree ◽  
Traditional Structure ◽  
Initiation And Propagation

Nonlinear insulated materials can uniform electric field distribution in non-uniform electric field. In order to inhibit the electric tree initiation and propagation inside high-voltage cross-linked polyethylene (XLPE) insulated cable, a kind of 220kV high-voltage XLPE insulated cable with new structure is designed by embedding nonlinear shielding layer into XLPE insulation layer of high-voltage cable with traditional structure in this study. Experimental and simulation results indicate that the nonlinear shielding layer can effectively inhibit electrical tree propagation inside the XLPE specimens, and obviously extend the breakdown time caused by electric tree propagation. When the electrical tree propagates into the nonlinear shielding layer sandwiched between insulation layers of cable, the electric field distribution near the tip of electrical tree is obviously improved. These findings prove the feasibility and the effectivity of inhibiting electrical tree propagation inside high-voltage cable by adding nonlinear shielding layer into the insulation layer.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

2014 ◽  
Vol 778-780 ◽  
pp. 915-918 ◽  
Author(s):  
Keiji Wada ◽  
Kosuke Uchida ◽  
Ren Kimura ◽  
Mitsuhiko Sakai ◽  
Satoshi Hatsukawa ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Doping Control ◽  
Parallel Plane ◽  
Drain Voltage ◽  
Edge Termination ◽  
Switching Characteristics

Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction termination extension (JTE) and field limiting ring (FLR), a breakdown voltage of 3,850 V for 3.3 kV -class MOSFET has been attained. This result corresponds to about 95% of the approximate parallel-plane breakdown voltage estimated from the doping concentration and the thickness of the epitaxial layer. Implanted doping for the JFET region is effective in reducing JFET resistance, resulting in the specific on-resistance of 14.2 mΩcm2 for 3.3 kV SiC MOSFETs. Switching characteristics at the high drain voltage of 2.0 kV are also discussed.

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