scholarly journals Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

2021 ◽  
Author(s):  
Xueke Wang ◽  
Yabin Sun ◽  
Ziyu Liu ◽  
Yun Liu ◽  
Xiaojin Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Drain Current ◽  
Electron Hole ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
And Performance ◽  
First Time ◽  
Tcad Simulations

Abstract In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- $\kappa$ Gate Dielectrics

2009 ◽  
Vol 56 (1) ◽  
pp. 100-108 ◽  
Author(s):  
Martin Schlosser ◽  
Krishna K. Bhuwalka ◽  
Martin Sauter ◽  
Thomas Zilbauer ◽  
Torsten Sulima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Drain Current ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Screen-Grid Field Effect Transistor for sensing Bio-Molecules

2009 ◽  
Vol 1191 ◽  
Author(s):  
Kwee Guan Eng ◽  
Kristel Fobelets ◽  
Enrique Velazquez-Perez
Keyword(s):  
Particle Size ◽  
Influenza A Virus ◽  
Field Effect ◽  
Influenza A ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Coulter Counter ◽  
Effect Transistor ◽  
Screen Grid ◽  
Tcad Simulations

AbstractA novel field effect transistor, based on the Screen Grid Field Effect Transistor concept, is proposed with an integrated Coulter Counter pore for amplification of the sensing signal. 3D TCAD simulations are performed on the use of the Coulter Counter Field Effect Transistor (CCFET) to detect the Influenza A virus. The gate of the transistor is the pore through which the bioparticles pass. This passage causes a change in the electrostatic conditions of the gate and thus changes the source-drain current, similar to ISFET operation. The structure of the CC-FET is optimised for bio-sensing and multi-particle passage through the gate hole is simulated. TCAD results show that the CC-FET is capable of multi-particle and particle size detection.

Sign in / Sign up

Export Citation Format

Share Document