Voltage Feedback Operational Amplifier DC Open Loop Gain Nonlinearity Measurements Spice Set-Up

Author(s):  
Cristian Neacsu ◽  
Valentin Chesaru ◽  
Claudius Dan ◽  
Mircea Bodea
2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.


2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000109-000112
Author(s):  
Cheng-Po Chen ◽  
Lucian Stoica ◽  
Emad Andarawis ◽  
Russell Simpson

Abstract A custom designed SOI operational amplifier (opamp) is used in two application circuits and characterized up to 300°C: 1. An instrumentation amplifier (in-amp) with a differential voltage gain of 100, and 2. A transimpedance amplifier (TIA) with a gain of 1.2 giga Ohm, used to sense picoamp level signals. The opamp operates with a 5-volt supply, and has rail-to-rail inputs and outputs. The open loop gain of the opamp is about 100 dB at room temperature and stays above 60 dB at 300°C. The in-amp uses the classic three operational amplifier (opamp) architecture with off-chip feedback resistors. The closed loop gain of the in-amp remains stable at 100, up to 250°C, and drops to 95 at 300°C. Temperature dwell test shows the in-amp maintaining stable functionality at 300°C for at least 1000 hours. The TIA also incorporates a silicon carbide diode to achieve gain compression by lowering the feedback gain when the input signal is higher, thus allowing a higher dynamic range input before the circuit output saturates.


Author(s):  
Cristian Neacsu ◽  
Valentin Chesaru ◽  
Claudius Dan ◽  
Mircea Bodea
Keyword(s):  

2020 ◽  
Vol 37 (4) ◽  
pp. 205-213
Author(s):  
Norhamizah Idros ◽  
Zulfiqar Ali Abdul Aziz ◽  
Jagadheswaran Rajendran

Purpose The purpose of this paper is to demonstrate the acceptable performance by using the limited input range towards lower open-loop DC gain operational amplifier (op-amp) of an 8-bit pipelined analog-to-digital converter (ADC) for mobile communication application. Design/methodology/approach An op-amp with folded cascode configuration is designed to provide the maximum open-loop DC gain without any gain-boosting technique. The impact of low open-loop DC gain is observed and analysed through the results of pre-, post-layout simulations and measurement of the ADC. The fabrication process technology used is Silterra 0.18-µm CMOS process. The silicon area by the ADC is 1.08 mm2. Findings Measured results show the differential non-linearity (DNL) error, integral non-linearity (INL) error, signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR) are within −0.2 to +0.2 LSB, −0.55 LSB for 0.4 Vpp input range, 22 and 27 dB, respectively, with 2 MHz input signal at the rate of 64 MS/s. The static power consumption is 40 mW with a supply voltage of 1.8 V. Originality/value The experimental results of ADC showed that by limiting the input range to ±0.2 V, this ADC is able to give a good reasonable performance. Open-loop DC gain of op-amp plays a critical role in ADC performance. Low open-loop DC gain results in stage-gain error of residue amplifier and, thus, leads to nonlinearity of output code. Nevertheless, lowering the input range enhances the linearity to ±0.2 LSB.


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