Hot spots induced by reverse leakage current flow through the semiconductor-dielectric interface from device PN junction periphery

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

Download Full-text

Leakage current flow through wooden pole structures of varying age on overhead distribution system

2007 Australasian Universities Power Engineering Conference ◽

10.1109/aupec.2007.4548085 ◽

2007 ◽

Cited By ~ 5

Author(s):

K. L. Wong ◽

S. Pathak ◽

X. H. Yu

Keyword(s):

Leakage Current ◽

Distribution System ◽

Current Flow ◽

Flow Through

Download Full-text

Abstract 63: Hands-On Defibrillation: An Analysis of Current Flow Through Rescuers In Contact With Patients During Biphasic External Defibrillation

Circulation ◽

10.1161/circ.116.suppl_16.ii_936-c ◽

2007 ◽

Vol 116 (suppl_16) ◽

Author(s):

Michael S Lloyd ◽

Eric L Krivitsky ◽

Paul F Walter ◽

Jonathan J Langberg

Keyword(s):

Leakage Current ◽

Current Flow ◽

Chest Compressions ◽

Case Scenario ◽

Storage Oscilloscope ◽

Worst Case ◽

Shock Delivery ◽

Digital Storage ◽

Posterior Shoulder ◽

Flow Through

Background: During cardiopulmonary resuscitation, the need for rescuers to stand clear before a shock is delivered invariably interrupts chest compressions. Brief interruptions like these reduce the efficacy of defibrillation in animal models. Current flow through a rescuer in contact with a patient being shocked with modern biphasic waveforms and adhesive patch electrodes has not been investigated. We hypothesized that leakage current is low through a rescuer performing chest compressions at the time of shock delivery. Methods: During 18 elective cardioversions using truncated exponential biphasic waveforms (median energy 200 joules, range 100 –360 joules), an investigator serving as the rescuer placed a gloved hand on the patient’s anterior chest immediately adjacent to the defibrillating patch with approximately 20lbs of pressure to simulate chest compressions. Skin electrodes were used to connect the rescuer’s thigh to the patient’s posterior shoulder, simulating a worst-case return current pathway. During shock delivery, voltage and current through the rescuer (hand to thigh) were recorded using a digital storage oscilloscope during the shock delivery. Results: In no cases were shocks perceptible to the rescuer. Mean patient transthoracic impedance was 57 +/− 14 ohms (range 36 –79 ohms). Potential differences in volts (V) between the rescuer’s wrist and thigh ranged from 1.7 to 14 V (mean 6.7 +/− 2.7 V). Calculated impedances through rescuers ranged from 8,190 to 100,400 ohms (mean 30,100 +/− 20,400 ohms). The average leakage current flowing through the rescuer’s body for each phase of the shock waveform was 273 +/−191 microamperes (range 1 to 910 microamperes). All measured values in our series were well below 2,500 microamperes, an accepted safety standard for earth-leakage current in medical devices. Conclusions: Even in a simulated worst-case scenario, a rescuer performing chest compressions during biphasic external defibrillation is exposed to low levels of leakage current. Our findings demonstrate the safety and feasibility of uninterrupted chest compressions during shock delivery, which may enhance the efficacy of defibrillation and cardiocerebral perfusion.

Download Full-text

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.999 ◽

2008 ◽

Vol 600-603 ◽

pp. 999-1002 ◽

Cited By ~ 3

Author(s):

Tomokatsu Watanabe ◽

Yukiyasu Nakao ◽

Keiko Fujihira ◽

Naruhisa Miura ◽

Yoichiro Tarui ◽

...

Keyword(s):

Leakage Current ◽

Threading Dislocations ◽

Etch Pits ◽

Cross Sectional ◽

Etch Pit ◽

Reverse Leakage Current ◽

Pn Junction ◽

Crystalline Defect ◽

Koh Etching ◽

Epilayer Surface

A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main cause of the leakage current, was observed in about 90% of the current leak points of our pn diodes. Double shell pits were observed at the edge of the FSD after molten KOH etching, indicating that the FSD is elongated on a basal plane and crosses the epilayer surface. The FSDs are sorted into several groups in terms of the shapes and arrangements of the etch pits. A cross-sectional TEM image of an FSD shows an eight-hold stacked structure, demonstrating that the defect contains a stacking fault. Etch pit observation after repetitive RIE of an epilayer revealed that FSDs originate both in threading dislocations in SiC substrates and from an SiC epitaxial growth process itself.

Download Full-text

Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique

MRS Proceedings ◽

10.1557/proc-512-157 ◽

1998 ◽

Vol 512 ◽

Cited By ~ 5

Author(s):

M. Frischholz ◽

K. Nordgren ◽

K. Rottner ◽

J. Seidel ◽

A. Schöner ◽

...

Keyword(s):

Failure Analysis ◽

Leakage Current ◽

High Voltage ◽

Hot Spots ◽

Operating Conditions ◽

Optical Beam ◽

Reverse Bias Voltage ◽

Induced Current ◽

Reverse Leakage Current ◽

Optical Beam Induced Current

ABSTRACTThe optical beam induced current (OBIC) technique allows a direct imaging of high voltage PN junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper we focus on the application of the UV-OBIC technique for failure analysis of 4H SiC high voltage P+N diodes.4H SiC P+N diodes with a 2-zone junction termination extension were used. The diodes were characterized in terms of reverse leakage current and breakdown voltage. Various devices were chosen for failure analysis on the base of early breakdown and/or excessive leakage current for OBIC measurements to study extrinsic failures. As a reference we selected diodes that blocked more than 2 kV with a leakage current density of typically less than 0.1 μA/cm2.OBIC measurements have been used to detect failures in devices that manifest themselves as peaks or “hot spots” in the photocurrent distribution. Early breakdown of diodes could be attributed to formation of hot spots in the periphery of the diodes. The appearance of a hot spot preceded any noticeable increase in reverse leakage current and is thus a very sensitive tool to identify defective diodes already at low voltage levels.The photocurrent generated by illumination of hot spots has been measured as a function of reverse bias voltage and the current multiplication factor has been determined.

Download Full-text

Water Temperature Control Using PID Control System Based on LabVIEW

Telekontran : Jurnal Ilmiah Telekomunikasi, Kendali dan Elektronika Terapan ◽

10.34010/telekontran.v4i2.1888 ◽

2016 ◽

Vol 4 (2) ◽

pp. 35-46

Author(s):

Ari Ramadhani

Keyword(s):

Water Temperature ◽

Pid Control ◽

Temperature Sensor ◽

Pid Controller ◽

Current Flow ◽

Electrical Energy ◽

Heating Process ◽

Water Heater ◽

Digital Thermometer ◽

Flow Through

Abstract - Automatic system have grown widespread across all sector so do water heater. Traditionally, heating water is done by utilizing fire as heat source. As the growing of technology, the heating process could be done by manipulating electrical energy by convert it to heat. Electrical energy is flown to a metal rod that contact directly with the water which increase the water temperature. On some case, appropiate water temperature is needed. Altough, a thermometer is needed to read the actual temperature as a feedback value for the system and a system that can control the electricity current flow through the heater that the heat produced is linear to the current flow. With implementing microcontroller as a process node for generating PWM signal, this problem can be solved. Also, Labview is needed as an interface for monitoring and bursting an output which have been processed by Proportional, Integral, and Devivative (PID) controller to producing accurate and stable heat. Based on the results of testing, the system is able to provide a rapid response to any changes that occur, both changes in set-point and changes in water temperature (actual value). Another test is done by comparing the temperature value detected by the temperature sensor in this device with an external digital thermometer placed in the same place, and from some of the tests the temperature value detected by the temperature sensor in this device has a difference of ± 0.19 ℃ with a digital thermometer. Keyword : Water Heater, Thermometer, Microcontroller, LabView, PID.

Download Full-text

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

Applied Physics Letters ◽

10.1063/5.0044130 ◽

2021 ◽

Vol 118 (12) ◽

pp. 122102

Author(s):

Qinglong Yan ◽

Hehe Gong ◽

Jincheng Zhang ◽

Jiandong Ye ◽

Hong Zhou ◽

...

Keyword(s):

Leakage Current ◽

Schottky Diode ◽

Current Modulation ◽

Reverse Leakage Current

Download Full-text

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

MRS Proceedings ◽

10.1557/proc-391-327 ◽

1995 ◽

Vol 391 ◽

Author(s):

W.F. Mcarthur ◽

K.M. Ring ◽

K.L. Kavanagh

Keyword(s):

Leakage Current ◽

Diffusion Barrier ◽

Depth Profiling ◽

Electrical Characterization ◽

Implantation Dose ◽

Cu Metallization ◽

Reverse Leakage Current ◽

Transmission Electron ◽

Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Download Full-text