Along with the reduction in semiconductor chip size and enhanced performance of electronic devices, high input/output density is a desired factor in the electronics industry. To satisfy the high input/output density, fan-out wafer-level packaging has attracted significant attention.
While fan-out wafer-level packaging has several advantages, such as lower thickness and better thermal resistance, warpage is one of the major challenges of the fan-out wafer-level packaging process to be minimized. There have been many studies investigating the effects of material properties
and package design on warpage using finite element analysis. Current warpage simulations using finite element analysis have been routinely conducted with deterministic input parameters, although the parameter values are uncertain from the manufacturing point of view. This assumption may lead
to a gap between the simulation and the field results. This paper presents an uncertainty analysis of wafer warpage in fan-out wafer-level packaging by using finite element analysis. Coefficient of thermal expansion of silicon is considered as a parameter with uncertainty. The warpage and
the von Mises stress are calculated and compared with and without uncertainty.