Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers

ABSTRACTIn this paper, we present results of our investigations on some aspects of the DX centers. It is shown from the low temperature Hall mobility measurements that the charge state of the DX center is neutral supporting the positive U model for the DX center. Hall and DLTS measurements on Al-rich Al0.8Ga0.2As:Te sample show a reversal in the ordering of the energies of the hydrogenic and deep states of the Te donor, with the DX state lying higher than the X valley related effective mass state. Thermal emission properties of the pressure induced DX states of Ge and Se donors in neutron transmutation doped (NTD) GaAs are discussed.

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Influence of DX centers in the AlxGa1−xAs barrier on the low‐temperature density and mobility of the two‐dimensional electron gas in GaAs/AlGaAs modulation‐doped heterostructure

Applied Physics Letters ◽

10.1063/1.113216 ◽

1995 ◽

Vol 66 (11) ◽

pp. 1406-1408 ◽

Cited By ~ 3

Author(s):

Bin Yang ◽

Zhan‐guo Wang ◽

Yong‐hai Cheng ◽

Ji‐ben Liang ◽

Lan‐ying Lin ◽

...

Keyword(s):

Low Temperature ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dx Centers ◽

Dimensional Electron Gas

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Using Dx Centers to Write Erasable Metallic Patterns in AlGaAs

MRS Proceedings ◽

10.1557/proc-360-91 ◽

1994 ◽

Vol 360 ◽

Author(s):

Tineke Thio ◽

R.A. Linke ◽

G.E. Devlin ◽

J.W. Bennett ◽

J.D. Chadi ◽

...

Keyword(s):

Low Temperature ◽

Data Storage ◽

Lattice Relaxation ◽

Optical Diffraction ◽

Spatial Modulation ◽

Thick Sample ◽

Dx Centers ◽

Free Carrier Density ◽

Large Lattice ◽

Submicron Devices

AbstractDX centers are semiconductor dopants which form deep states due to a large lattice relaxation. At low temperature, the DX centers exhibit persistent photoconductivity. When exposed to light in a spatial pattern, the photocarriers are confined to the illuminated regions by Coulomb interaction with the localised DX centers. The resulting spatial modulation of the free carrier density gives rise to a modulation of both the electrical conductivity and the dielectric constant. We demonstrate both effects by measurements of the conductance anisotropy and optical diffraction of samples exposed to excitation in a striped pattern. Erasure is achieved by thermal annealing. The constrast ratio of the conductivity modulation is greater than 108; in our experiment it is limited to ∼100 by light scattering. We estimate that 100nm resolution is feasible. Optical diffraction efficiencies up to 40% have been demonstrated in a stripe-illuminated thick sample. The persistence of the written patterns at low temperature is potentially useful in high-density data storage applications and the fabrication of erasable submicron devices.

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DX Centers in GaAs and AlxGal-x.As: Properties and Influence on Material and Device Characteristics

MRS Proceedings ◽

10.1557/proc-104-561 ◽

1987 ◽

Vol 104 ◽

Cited By ~ 7

Author(s):

P. M. Mooney

Keyword(s):

Low Temperature ◽

Carrier Concentration ◽

Conduction Band ◽

Energy State ◽

Free Carrier ◽

Free Carrier Concentration ◽

Persistent Photoconductivity ◽

Dx Centers ◽

Compensation Mechanisms ◽

Dx Center

ABSTRACTThe DX center, the lowest energy state of the donor in AlGaAs with x > 0.22, is responsible for the reduced conductivity as well as the persistent photoconductivity observed in this material at low temperature. Extensive studies of the properties of this level and of its effects on the characteristics of some heterojunction devices are reviewed here. Recent measurements are presented showing that the characteristics of the DX center remain essentially unchanged when it is resonant with the conduction band (x < 0.22) and that, independent of other compensation mechanisms, the DX center therefore limits the free carrier concentration in GaAs to a maximum of about 2×1019 cm− 3.

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Exsolution and inversion in pigeonite from the Whin Sill, Northern England

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109513 ◽

1978 ◽

Vol 36 (1) ◽

pp. 474-475

Author(s):

P.P.K. Smith

Keyword(s):

High Temperature ◽

Low Temperature ◽

Homogeneous Nucleation ◽

Silicate Mineral ◽

Antiphase Boundaries ◽

Two Phase ◽

Primitive Form ◽

The Core ◽

Nucleation Mechanisms ◽

And Inversion

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.

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Low temperature x-ray microanalysis of frozen-hydrated tobacco leaves

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100111537 ◽

1984 ◽

Vol 42 ◽

pp. 284-285

Author(s):

S. Edith Taylor ◽

Patrick Echlin ◽

May McKoon ◽

Thomas L. Hayes

Keyword(s):

Low Temperature ◽

Lemna Minor ◽

Root Tips ◽

Tobacco Leaves ◽

X Ray ◽

Whole Cells ◽

Carbon Coated ◽

The Right ◽

Beam Currents ◽

The University

Low temperature x-ray microanalysis (LTXM) of solid biological materials has been documented for Lemna minor L. root tips. This discussion will be limited to a demonstration of LTXM for measuring relative elemental distributions of P,S,Cl and K species within whole cells of tobacco leaves.Mature Wisconsin-38 tobacco was grown in the greenhouse at the University of California, Berkeley and picked daily from the mid-stalk position (leaf #9). The tissue was excised from the right of the mid rib and rapidly frozen in liquid nitrogen slush. It was then placed into an Amray biochamber and maintained at 103K. Fracture faces of the tissue were prepared and carbon-coated in the biochamber. The prepared sample was transferred from the biochamber to the Amray 1000A SEM equipped with a cold stage to maintain low temperatures at 103K. Analyses were performed using a tungsten source with accelerating voltages of 17.5 to 20 KV and beam currents from 1-2nA.

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Bulk standards for low-temperature biological x-ray microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100111525 ◽

1984 ◽

Vol 42 ◽

pp. 282-283

Author(s):

P. Echlin ◽

M. McKoon ◽

E.S. Taylor ◽

C.E. Thomas ◽

K.L. Maloney ◽

...

Keyword(s):

Phase Separation ◽

Low Temperature ◽

Analytical Method ◽

Salt Solutions ◽

Absolute Concentration ◽

Cooling Process ◽

X Ray ◽

The Absolute ◽

Analytical Procedures ◽

Electrical Conductors

Although sections of frozen salt solutions have been used as standards for x-ray microanalysis, such solutions are less useful when analysed in the bulk form. They are poor thermal and electrical conductors and severe phase separation occurs during the cooling process. Following a suggestion by Whitecross et al we have made up a series of salt solutions containing a small amount of graphite to improve the sample conductivity. In addition, we have incorporated a polymer to ensure the formation of microcrystalline ice and a consequent homogenity of salt dispersion within the frozen matrix. The mixtures have been used to standardize the analytical procedures applied to frozen hydrated bulk specimens based on the peak/background analytical method and to measure the absolute concentration of elements in developing roots.

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Field ion microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104236 ◽

1988 ◽

Vol 46 ◽

pp. 434-435

Author(s):

Gert Ehrlich

Keyword(s):

Low Temperature ◽

Sample Surface ◽

Low Pressure ◽

Radius Of Curvature ◽

Field Ion Microscopy ◽

Phosphor Screen ◽

Ion Microscopy ◽

Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

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