A Parametric Simulative Study for Si and SiC Semiconductor Devices Under Various Accelerated Testing Conditions Using Rate- and Temperature Dependent Inelastic Material Data
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2014 ◽
Vol 656
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pp. 442-449
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2002 ◽
Vol 26
(2)
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pp. 115-127
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1995 ◽
Vol 38
(7)
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pp. 1409-1412
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