scholarly journals Managing Data Retention Policies at Scale

2012 ◽  
Vol 9 (4) ◽  
pp. 393-406 ◽  
Author(s):  
J. Li ◽  
S. Singhal ◽  
R. Swaminathan ◽  
A. H. Karp
Keyword(s):  
Data Retention ◽  
Retention Policies

scholarly journals Privacy Attitudes of Smart Speaker Users

2019 ◽  
Vol 2019 (4) ◽  
pp. 250-271 ◽  
Author(s):  
Nathan Malkin ◽  
Joe Deatrick ◽  
Allen Tong ◽  
Primal Wijesekera ◽  
Serge Egelman ◽  
...  
Keyword(s):  
Status Quo ◽  
Third Parties ◽  
Data Retention ◽  
The Status ◽  
Retention Policies

Abstract As devices with always-on microphones located in people’s homes, smart speakers have significant privacy implications. We surveyed smart speaker owners about their beliefs, attitudes, and concerns about the recordings that are made and shared by their devices. To ground participants’ responses in concrete interactions, rather than collecting their opinions abstractly, we framed our survey around randomly selected recordings of saved interactions with their devices. We surveyed 116 owners of Amazon and Google smart speakers and found that almost half did not know that their recordings were being permanently stored and that they could review them; only a quarter reported reviewing interactions, and very few had ever deleted any. While participants did not consider their own recordings especially sensitive, they were more protective of others’ recordings (such as children and guests) and were strongly opposed to use of their data by third parties or for advertising. They also considered permanent retention, the status quo, unsatisfactory. Based on our findings, we make recommendations for more agreeable data retention policies and future privacy controls.

DATA RETENTION POLICIES AFTER ENRON

2002 ◽  
Vol 18 (5) ◽  
pp. 333-337 ◽  
Author(s):  
Rowan Middleton ◽  
Herbert Smith
Keyword(s):  
Data Retention ◽  
Retention Policies

scholarly journals Introduction: The “Privacy” Special Issue of the Journal of Intellectual Freedom & Privacy

2017 ◽  
Vol 2 (1) ◽  
pp. 3
Author(s):  
Michael Zimmer
Keyword(s):  
Professional Ethics ◽  
Intellectual Freedom ◽  
Bill Of Rights ◽  
Special Issue ◽  
Data Retention ◽  
Short Term ◽  
Privacy And Confidentiality ◽  
Intellectual Activities ◽  
Retention Policies ◽  
Term Data

Within libraries, a patron’s intellectual activities are protected by decades of established norms and practices intended to preserve patron privacy and confidentiality, most stemming from the American Library Association’s Library Bill of Rights and related interpretations. As a matter of professional ethics, most librarians protect patron privacy by engaging in limited tracking of user activities, instituting short-term data retention policies, and generally enabling the anonymous browsing of materials. These are the existing privacy norms within the library context, and the cornerstone of what makes up the “librarian ethic.”

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Non-Visible Defect Analysis of OTP Device

2011 ◽  
Author(s):  
C.Q. Chen ◽  
G.B. Ang ◽  
Z.X. Xing ◽  
Y.N. Hua ◽  
Z.Q. Mo ◽  
...  
Keyword(s):  
Trap Center ◽  
Data Retention ◽  
Auger Analysis ◽  
Cross Sectional ◽  
Critical Dimensions ◽  
Charge Trap ◽  
Root Cause ◽  
Transmission Electron ◽  
Electrical Analysis ◽  
Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

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