Gallium Nitride Semiconductors in Power Electronics for Electric Vehicles: Advantages and Challenges

Author(s):  
Adrien Letellier ◽  
Maxime R. Dubois ◽  
Joao P. Trovao ◽  
Hassan Maher
2013 ◽  
Vol 16 (3-4) ◽  
pp. 447-463
Author(s):  
Benoît Sarrazin ◽  
Nicolas Rouger ◽  
Jean-Paul Ferrieux

2021 ◽  
Vol MA2021-02 (32) ◽  
pp. 958-958
Author(s):  
Robert J. Kaplar ◽  
Andrew A. Allerman ◽  
Mary H. Crawford ◽  
Brendan P. Gunning ◽  
Jack D. Flicker ◽  
...  

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 654
Author(s):  
Minh-Khai Nguyen

In recent years, power converters have played an important role in power electronics technology for different applications, such as renewable energy systems, electric vehicles, pulsed power generation, and biomedical [...]


2020 ◽  
Vol 10 (14) ◽  
pp. 4988
Author(s):  
Sandra Aragon-Aviles ◽  
Ashutosh Trivedi ◽  
Sheldon S. Williamson

The need to reduce the use of fossil fuels and greenhouse gas (GHG) emissions produced by the transport sector has generated a clear increasing trend in transportation electrification and the future of energy and mobility. This paper reviews the current research trends and future work for power electronics-based solutions that support the integration of photovoltaic (PV) energy sources and smart grid with charging systems for electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEV). A compressive overview of isolated and non-isolated DC–DC converters and AC–DC converter topologies used to interface the PV-grid charging facilities is presented. Furthermore, this paper reviews the modes of operation of the system currently used. Finally, this paper explores the future roadmap of research for power electronics solutions related to photovoltaic (PV) systems, smart grid, and transportation electrification.


2007 ◽  
Vol 1040 ◽  
Author(s):  
Choudhury Jayant Praharaj

AbstractWe present variational calculations of donor binding energy in rectangular wurtzite aluminium gallium nitride / gallium nitride quantum wires. We explicitly take into account the effect of spontaneous and piezoelectric polarization on the energy levels of donors in quantum wires. Wurtzite structure nitride semiconductors have spontaneous polarization even in the absence of externally applied electric fields. They also have large piezoelectric polarization when grown as pseudomorphic layers. The magnitude of both polarization components is of the order of 1013 electrons per cm2, and has a non-trivial effect on the potential profile seen by electrons. Due to the large built-in electric fields resulting from the polarization discontinuities at heterojunctions, the binding energies of donors is a strong function of the position inside the quantum wire. The potential profile in the 0001 direction can vary by as much as 1.5eV due to polarization effects for vertical dimensions of the quantum wire up to 20 angstroms. The probability density of electrons tends to concentrate near the minimum of the conduction band profile in the 0001 direction. Donors located close to this minimum tend to have a larger concentration of electron density compared to those located closer to the maximum. As a consequence, the binding energy of the former are higher compared to the latter. We use Lorentzian variational wavefunctions to calculate the binding energy as a function of donor position. The confinement potential enhances the binding by a factor of about 3 compared to donors in bulk nitride semiconductors, from about 30 meV to about 90 meV. The variation of binding energy with position is calculated to be more than 50% for typical compositions of the quantum wire regions. Our calculations will be useful for understanding device applications involving n-type doped nitride semiconductor quantum wires.


2020 ◽  
Author(s):  
Pharyanshu Kachhawa ◽  
Niketa Sharma ◽  
Amber Jain ◽  
Nidhi Chaturvedi

2020 ◽  
Vol 11 (2) ◽  
pp. 37 ◽  
Author(s):  
Daouda Mande ◽  
João Pedro Trovão ◽  
Minh Cao Ta

Power electronics play a fundamental role for electric transportation, renewable energy conversion and many other industrial applications. They have the ability to help achieve high efficiency and performance in power systems. However, traditional inverters such as voltage source and current source inverters present some limitations. Consequently, many research efforts have been focused on developing new power electronics converters suitable for many applications. Compared with the conventional two-stage inverter, Z-source inverter (ZSI) is a single-stage converter with lower design cost and high efficiency. It is a power electronics circuit of which the function is to convert DC input voltage to a symmetrical AC output voltage of desired magnitude and frequency. Recently, ZSIs have been widely used as a replacement for conventional two-stage inverters in the distributed generation systems. Several modifications have been carried out on ZSI to improve its performance and efficiency. This paper reviews the-state-of-art impedance source inverter main topologies and points out their applications for multisource electric vehicles. A concise review of main existing topologies is presented. The basic structural differences, advantages and limitations of each topology are illustrated. From this state-of-the-art review of impedance source inverters, the embedded quasi-Z-source inverter presents one of the promising architectures which can be used in multisource electric vehicles, with better performance and reliability. The utilization of this new topology will open the door to several development axes, with great impact on electric vehicles (EVs).


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