Carbon nanotubes (CNTs) have emerged as a
prominent material for present day nano-scale systems design. In
spite of their widespread use in biology, and nano-electro
mechanical systems (NEMS, CNTs have encroached upon
conventional MOSFETs for the design of low power and high
speed circuits. Because CNT possesses higher current carrying
capability, higher transconductance and near ballistic transport
of charge carriers. The diameter of the CNTs laid from the Source
to the Drain in a CNFET has the significant influence on the
characteristics of the device itself as well as on the features of
circuits implemented using the said CNFET. Such variations in
circuit parameters with CNT diameter can be shown to be more
pronounced in analog circuits as compared to digital
CNFET-based designs. The present work attempts to investigate
the effect of diameter variation on a versatile analog building
block (ABB) viz. the inverting current conveyor. It is demonstrated
that various parameters of the ICC-II under scrutiny, like voltage
bandwidth, current bandwidth, average power dissipation, etc.
depend on the diameter of CNT(s) used in the CNFETs. HSPICE
simulations performed on a 0.9V; 32nm CNFET-based ICC-II
are included to exemplify the dependencies studied.