Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Nicolo Zagni ◽  
Marcello Cioni ◽  
Alessandro Chini
Keyword(s):  
Time Constant ◽  
Drain Current ◽  
Gan Hemts ◽  
Current Transients ◽  
Trap Filling

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

2004 ◽  
Vol 14 (03) ◽  
pp. 769-774
Author(s):  
HYEONGNAM KIM ◽  
JAESUN LEE ◽  
WU LU
Keyword(s):  
Time Constant ◽  
High Mobility ◽  
Time Constants ◽  
Emission Time ◽  
Annealing Effects ◽  
Drain Bias ◽  
Gan Hemts ◽  
Electron Transistors ◽  
Shallow Traps ◽  
Transient Measurements

Trapping effects are investigated to examine the post-gate annealing effects on AlGaN/GaN high-mobility electron transistors (HEMTs) using pulsed I-V and transient measurements. In the unannealed devices, shallow traps are identified, which have an activation of 38 meV at a drain bias of 7 V. The time constant of these traps is determined to be ~0.5 μs. Devices annealed at 400°C for 10 minutes have a significantly smaller number of traps. However, a small number of traps with a longer time constant of 9.2 μs are created or activated during post-gate annealing. 20-minute annealing at 400°C leads to the increase of the number of traps with emission time constants of 21.6 μs and 1.25 ms. The breakdown voltage improvement by post-gate annealing is attributed to the removal or significant reduction of the shallow level traps.

Role of the substrate during pseudo-MOSFET drain current transients

2010 ◽  
Vol 54 (3) ◽  
pp. 316-322 ◽  
Author(s):  
K. Park ◽  
P. Nayak ◽  
D.K. Schroder
Keyword(s):  
Drain Current ◽  
Current Transients

Thermal Effects and Self-Heating Time Constant for GMR Recording Heads

2003 ◽  
Author(s):  
Lydia Baril ◽  
Erhard Schreck ◽  
Al Wallash
Keyword(s):  
Time Constant ◽  
Heating Time ◽  
Heat Sources ◽  
Resistance Change ◽  
Self Heating ◽  
Recording Heads ◽  
Gmr Sensors ◽  
Gmr Sensor ◽  
Short Time ◽  
Current Transients

An understanding of the temperature of the GMR reader element used in disk drives during operating and non-operating condition is critical to optimize its performance. Self-heating and/or external heat sources will cause an increase in the temperature of the GMR sensor. In this work we concentrate on the self-heating effect due to bias current. Experiments that monitored the resistance change during very short current pulses showed that state-of-the-art GMR sensors have an extremely short time-constant that is less than 2 ns. This work is applicable to the current transients that the GMR head experiences during electrical crosstalk, electrostatic discharge and thermal asperities.

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