Fabrication of an ultra‐thick‐oriented 3C‐SiC coating on the inner surface of a graphite tube by high‐frequency induction‐heated halide chemical vapor deposition

2019 ◽  
Vol 16 (3) ◽  
pp. 1004-1011
Author(s):  
Rong Tu ◽  
Xian Zhang ◽  
Youfeng Lai ◽  
Mingxu Han ◽  
Song Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Graphite Tube ◽  
Inner Surface ◽  
High Frequency Induction

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

2015 ◽  
Vol 18 (1) ◽  
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Narong Mungkung ◽  
Yoshimi Okamura ◽  
Atsushi Fujimaru ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polyethylene Naphthalate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
High Frequency Plasma ◽  
Frequency Plasma

AbstractThe low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

scholarly journals Quick Removal of Adsorbed Water Molecules on inner Surface of Metal Organic Chemical Vapor Deposition Equipment.

Shinku ◽  
2001 ◽  
Vol 44 (3) ◽  
pp. 298-301
Author(s):  
Katsumasa SUZUKI ◽  
Takayuki SATOU ◽  
Yoshio ISHIHARA ◽  
Hiroki TOKUNAGA
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Adsorbed Water ◽  
Organic Chemical ◽  
Water Molecules ◽  
Inner Surface ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition

2005 ◽  
Vol 54 (4) ◽  
pp. 1899
Author(s):  
Zhang Xiao-Dan ◽  
Zhao Ying ◽  
Gao Yan-Tao ◽  
Zhu Feng ◽  
Wei Chang-Chun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High
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