A Theory for the Effects of Film Thickness and Normal Load in the Friction of Thin Films

1969 ◽  
Vol 91 (3) ◽  
pp. 551-555 ◽  
Author(s):  
E. F. Finkin
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Coefficient Of Friction ◽  
Normal Load ◽  
Special Theory ◽  
Constant Load ◽  
Constant Thickness ◽  
Variable Load ◽  
Solid Friction ◽  
Contact Situation

The effect of film thickness in solid friction is reviewed. Two regimes are distinguished: (a) increasing coefficient of friction with decreasing film thickness which occurs for ultrathin films and (b) decreasing coefficient of friction with decreasing film thickness which occurs for thin films. The former regime has previously been treated by the author; consequently, attention is focused on the latter regime. A review of the thin film phenomenon establishes that it is very much dependent on the type of deformation occurring at the contact and concludes that no single expression can uniquely describe it for all materials situations. A special theory is put forth for the contact situation corresponding to a model of an elastic layer of much less rigidity than its substrate and indenter. This situation corresponds to practically all naturally occurring and bonded nonmetallic solid lubricant films of industrial and scientific interest. It is shown that coefficient of friction f obeys the relation f ∝ 1/P for variable load P and constant thickness h, f ∝ h for constant load and variable film thickness, and f ∝ h/P for the general case. These expressions are verified by use of data from pin-on-disk tests, Falex tests, 4-ball tests, modified MacMillan tests, and other types of tests. The experimental data are for naturally formed graphite on diamond, SiO2 bonded PbO on stainless steel, and phenolic bonded 9MoS2-1 graphite films on steel and aluminum.

The Size of the Friction Coefficient Depending on the Size and Course of Normal Load

2014 ◽  
Vol 474 ◽  
pp. 303-308 ◽  
Author(s):  
Eva Labašová
Keyword(s):  
Friction Coefficient ◽  
Coefficient Of Friction ◽  
Normal Load ◽  
Testing Machine ◽  
Constant Load ◽  
Current Component ◽  
Rectangular Shape ◽  
The Coefficient Of Friction ◽  
Ring Method ◽  
Run Up

The coefficient of friction for the bronze material (CuZn25Al6) with inset graphite beds is investigated in the present paper. Friction coefficient was investigated experimentally by the testing machine Tribotestor`89 which uses the principle of the ring on ring method. Tribotestor`89 machine may be classed to the rotary tribometers. The tested sliding pairs were of the same material. The internal bushing performed a rotational movement with constant sliding speed (v = 0.8 m s-1). The external fixed bushing was exposed to the normal load, which was of different sizes and different variations. Process of load was increased from level 50 N to 200 N (400 N, 600 N) during run up 600 s, after the run up the appropriate level of load was held.The forth test had a rectangular shape of loading with direct current component 400 N and the amplitude 200 N period 600 s, the whole test took 1800 s. The obtained results reveal that friction coefficient decreases with the increase of normal load. Further, that the coefficient of friction was found smaller at constant load, as compared to rectangular shape of loading.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Experimental Investigation of aluminum doping crumb rubber/epoxy composite in reciprocating motion

2015 ◽  
Vol 3 ◽  
pp. 1
Author(s):  
Goutam Chandra Karar ◽  
Nipu Modak
Keyword(s):  
Experimental Investigation ◽  
Coefficient Of Friction ◽  
Epoxy Composite ◽  
Normal Load ◽  
Crumb Rubber ◽  
The Other ◽  
Reciprocating Motion ◽  
Molding Process ◽  
Friction Tester ◽  
The Coefficient Of Friction

The experimental investigation of reciprocating motion between the aluminum doped crumb rubber /epoxy composite and the steel ball has been carried out under Reciprocating Friction Tester, TR-282 to study the wear and coefficient of frictions using different normal loads (0.4Kg, 0.7Kgand1Kg), differentfrequencies (10Hz, 25Hz and 40Hz).The wear is a function of normal load, reciprocating frequency, reciprocating duration and the composition of the material. The percentage of aluminum presents in the composite changesbut the other components remain the same.The four types of composites are fabricated by compression molding process having 0%, 10%, 20% and 30% Al. The effect of different parameters such as normal load, reciprocating frequency and percentage of aluminum has been studied. It is observed that the wear and coefficient of friction is influenced by the parameters. The tendency of wear goes on decreasing with the increase of normal load and it is minimum for a composite having 10%aluminum at a normal load of 0.7Kg and then goes on increasing at higher loads for all types of composite due to the adhesive nature of the composite. The coefficient of friction goes on decreasing with increasing normal loads due to the formation of thin film as an effect of heat generation with normal load.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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