Specific Heat Determination of Metallic Thin Films at Room Conditions

2015 ◽  
Vol 137 (5) ◽  
Author(s):  
J. M. Lugo ◽  
V. Rejón ◽  
A. I. Oliva
Keyword(s):  
Thin Films ◽  
Specific Heat ◽  
Thermal Model ◽  
Electronic Device ◽  
Metallic Thin Films ◽  
Electric Pulses ◽  
Glass Substrates ◽  
Film Substrate ◽  
Analytical Thermal Model

A methodology to evaluate the specific heat of metallic thin films at constant pressure and 300 K by means of the heating profile is proposed. Changes on the electrical resistance of metallic films after the application of short electric pulses (20–500 μs) are correlated with changes of temperature of the films. Electric pulses are applied on films by an implemented electronic device. A proposed analytical thermal model predicts the correlation between the duration of the electric pulses and the thermal profiles of the film/substrate systems. The analytical thermal model and the measured thermal profiles results are useful to evaluate the specific heat of films. Following this methodology, Au and Al nanofilms evaporated on glass substrates were analyzed. Results indicate that specific heat values of Au films decrease from (229 ± 15) J/kg K to (125 ± 8) J/kg K, and for Al films from (1444 ± 89) J/kg K to (947 ± 53) J/kg K, for film thicknesses from 20 to 200 nm.

Quantification the Effect of the Thickness of Thin Films on their Elastic Parameters

2011 ◽  
Vol 324 ◽  
pp. 93-96 ◽  
Author(s):  
Amel Gacem ◽  
A. Doghmane ◽  
Z. Hadjoub
Keyword(s):  
Thin Films ◽  
Elasticity Modulus ◽  
Calculation Model ◽  
Thickness Variation ◽  
Acoustic Signatures ◽  
Context Modelling ◽  
Universal Relationship ◽  
Film Substrate ◽  
Material Interaction

The determination of the characteristics and properties of thin films deposited on substrates is necessary in any device application in various fields. Adequate mechanical properties are highly required for the majority of surface waves and semiconductor devices. In this context, modelling the ultrasonic-material interaction, we present results of simulation curves of acoustic signatures for multiple thin film/substrate combinations. The results obtained on several structures (Al, SiO2, ZnO, Cu, AlN, SiC and Cr)/(Al2O3, Si, Cu or Quartz) showed a velocity dispersion of the Rayleigh wave as a function of layer thickness. The development of a theoretical calculation model based on the acoustic behaviour of these structures has enabled us to quantify the dispersive evolution (positive and negative) density. Thus, we have established a universal relationship describing the density-thickness variation. In addition, networks of dispersion curves, representing the evolution of elasticity modulus (Young and shear), were determined. These charts can be used to extract the influence of thickness of layers on the variation of elastic constants

Effects of substrate on determination of hardness of thin films by nanoscratch and nanoindentation techniques

2004 ◽  
Vol 19 (6) ◽  
pp. 1791-1802 ◽  
Author(s):  
Noureddine Tayebi ◽  
Andreas A. Polycarpou ◽  
Thomas F. Conry
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Elastic Recovery ◽  
Empirical Relationship ◽  
Residual Deformation ◽  
Substrate Effect ◽  
Nanoindentation Technique ◽  
Film Substrate ◽  
Composite Hardness

A comparative study on the effects of the substrate on the determination of hardness of thin films by the use of the nanoscratch and nanoindentation techniques was conducted. Gold films deposited on fused quartz substrates and silicon dioxide films deposited on aluminum substrates with variant film thicknesses were investigated. These two systems correspond to a soft film on a hard substrate and a hard film on a soft substrate, respectively. The effect of substrate interaction on the measurement of hardness using the nanoscratch technique was found to be less pronounced compared to that of the nanoindentation technique due to: (i) the lower normal loads applied to achieve the penetration depths that occur at higher loads when using the nanoindentation method; (ii) the direct imaging of the residual deformation profile that is used in the nanoscratch technique, which allows for the effects of pileup or sink-in to be taken into account, whereas in the nanoindentation technique the contact area is estimated from the load-displacement data, which does not include such effects; and (iii) the account of elastic recovery of the plastically deformed surfaces from scratch tests. The film thickness did not appear to have any effect on the hardness of Au and SiO2 films obtained from nanoscratch data. This observation allowed, for the case of SiO2 films, the determination of the “free substrate effect region” and the derivation of an empirical relationship that relates the composite hardness of the film/substrate system to the contact-depth-to-film-thickness ratio, even when the indenter penetrates into the substrate. Such findings can allow for the determination of the intrinsic hardness of ultrathin hard films (∼1–5 nm thick), where the substrate effect is unavoidable.

Non-Contact Real-Time Evaluation of Polyimide Thin Film Thermoelastic Properties Through Impulsive Stimulated Thermal Scattering

1992 ◽  
Vol 284 ◽  
Author(s):  
J. A. Rogers ◽  
A. R. Duggal ◽  
K. A. Nelson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Real Time ◽  
Viscoelastic Properties ◽  
Thermoelastic Properties ◽  
Substrate Adhesion ◽  
Thermal Scattering ◽  
Film Substrate ◽  
Time Evaluation

ABSTRACTWe demonstrate a new purely optical based method for the excitation and detection of acoustic and thermal disturbances in thin films. This technique is applied to the determination of the viscoelastic properties of unsupported and silicon supported polyimide thin (∼1 micron) films. We show how this technique can be used to detect film delaminations and suggest how it may be used to probe film-substrate adhesion quality.

Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films

2010 ◽  
Vol 645-648 ◽  
pp. 263-266 ◽  
Author(s):  
Jorge Andres Guerra ◽  
Anja Winterstein ◽  
Oliver Erlenbach ◽  
Gonzalo Gálvez ◽  
Francisco De Zela ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Bandgap ◽  
Optical Bandgap ◽  
Transmission Measurement ◽  
Wide Bandgap Semiconductor ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Empirical Law ◽  
Amorphous Sic

Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x were grown by radio frequency dual magnetron sputtering on CaF2, MgO and glass substrates. We performed isochronical annealing steps up to 500°C. The optical bandgap is determined for each composition from spectroscopic transmission measurement in two different ways: according to Tauc and using the (αhν)2 plot. The dependence of the optical bandgap on the composition x can be described by Vegard’s empirical law for alloys.

Recoil Implantation of Ito thin Films on Glass Substrates

1983 ◽  
Vol 27 ◽  
Author(s):  
B. H. Rabin ◽  
B. B. Harbison ◽  
S. R. Shatynski
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Deposition ◽  
Window Glass ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Film Substrate

ABSTRACTIndium-Tin Oxide (ITO) heat mirror films implanted into window glass were obtained by post annealing of argon irradiated coatings of In-5w/o Sn produced by reactive evaporation in oxygen. Characterization of coatings has been carried out using TEM and AES. Optical properties have also been evaluated. The production of acceptable thin films requires low energy deposition rates during ion bombardment. This places a limit on the extent of film-substrate mixing, which is required if increased film lifetimes are to be realized.

DETERMINATION OF THE OPTICAL CONSTANTS OF InxSey THIN FILMS DEPOSITED BY EVAPORATION AND COEVAPORATION

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1687-1691 ◽  
Author(s):  
J. SANDINO ◽  
G. GORDILLO
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Interference Effects ◽  
Spectral Transmittance ◽  
Cauchy Equation ◽  
Glass Substrates ◽  
Special Procedure

In x Se y thin films, grown on soda lime glass substrates in the In 6 Se 7 phase by evaporation of the In 2 Se 3 compound and in the In 2 Se 3 phase by coevaporation of In and Se, were optically characterized through spectral transmittance measurements. A special procedure was developed to determine the thickness d and the optical constants (refractive index n, absorption coefficient α, and optical gap Eg). This includes experimental measurements of the spectral transmittance and the use of a model taking into account interference effects induced by internal reflections presented in the interfaces substrate/film and film/air and the fitting of the n vs. λ curve to the Cauchy equation (n = A + B/λ2). The optical constants of the In x Se y thin films were corrected comparing the experimental transmittance spectrum with the theoretical one. The results revealed that the optical constants of the In x Se y films were significantly affected by the deposition method.

scholarly journals TiO2 waveguides thin films prepared by sol-gel method on glass substrates with and without ZnO underlayer

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Y. Bouachiba ◽  
A. Taabouche ◽  
A. Bouabellou ◽  
F. Hanini ◽  
C. Sedrati ◽  
...  
Keyword(s):  
Thin Films ◽  
Glass Sample ◽  
Anatase Phase ◽  
Sol Gel ◽  
Single Mode ◽  
Dip Coating ◽  
Glass Substrates ◽  
Diffraction Peaks ◽  
Xrd Patterns

AbstractTiO2 thin films have been deposited on glass substrates with and without ZnO underlayer by sol-gel dip coating process. XRD patterns show the formation of anatase phase with the diffraction lines (1 0 1) and (2 0 0) in TiO2/glass sample. In TiO2/(ZnO/glass) sample, TiO2 is composed of anatase phase with the diffraction line (2 0 0) but the diffraction peaks of ZnO wurtzite are also well-defined. The determination of the refractive index and the thickness of the waveguiding layers has been performed by m-lines spectroscopy. The thickness of TiO2 thin films deduced by Rutheford Backscattering Geometry (RBS) agrees well with that obtained by m-lines spectroscopy. TiO2/glass sample exhibits one guided TE0 and TM0 polarized modes. In TiO2/(ZnO/glass) sample, only, TE0 single mode has been excited due to cutoff condition.

Compositional Determination of Sputtered Tantalum—Aluminum Thin Films

1971 ◽  
Vol 25 (4) ◽  
pp. 489-493
Author(s):  
James D. Nohe ◽  
David A. Green
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Absorption ◽  
Unit Area ◽  
X Ray ◽  
Glass Substrates ◽  
Fluorescence Measurements ◽  
Before And After ◽  
Film Weight

Tantalum–aluminum thin film composition has been determined destructively by atomic absorption and nondestructively by x-ray fluorescence spectroscopy. Samples representing several compositions (20–80 at.% aluminum) and thicknesses (500–6000 Å) were sputtered on glass, graphite, and platinum substrates. The films were dissolved from the platinum substrates for the determination of aluminum by atomic absorption. The weights of tantalum per unit area obtained by difference using this destructive technique were applied to the same samples on glass substrates for correlation with nondestructive x-ray fluorescence measurements. A linear curve, which is free from enhancement and absorption effects, is obtained for tantalum. This curve relates the nondestructive fluorescence intensities to film weights (µg/cm2) of tantalum. The composition of the film is determined nondestructively by utilizing this curve and the total film weight which is obtained by weighing the substrate before and after sputtering. Alternately, composition may be determined destructively by atomic absorption utilizing films dissolved from platinum substrates

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