Recoil Implantation of Ito thin Films on Glass Substrates

1983 ◽  
Vol 27 ◽  
Author(s):  
B. H. Rabin ◽  
B. B. Harbison ◽  
S. R. Shatynski
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Deposition ◽  
Window Glass ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Film Substrate

ABSTRACTIndium-Tin Oxide (ITO) heat mirror films implanted into window glass were obtained by post annealing of argon irradiated coatings of In-5w/o Sn produced by reactive evaporation in oxygen. Characterization of coatings has been carried out using TEM and AES. Optical properties have also been evaluated. The production of acceptable thin films requires low energy deposition rates during ion bombardment. This places a limit on the extent of film-substrate mixing, which is required if increased film lifetimes are to be realized.

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

Post-Annealing Effects on ITO Thin Films RF Sputtered at Different Thicknesses on Si and Glass

2014 ◽  
Vol 925 ◽  
pp. 411-415 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Siti Khadijah Mohd Bakhori ◽  
Hassan Zainuriah
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Morphological Characteristics ◽  
Annealing Treatment ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films

We report on electrical, optical and surface morphological characteristics of indium tin oxide (ITO) thin films. The ITO was deposited by radio frequency (RF) magnetron sputtering on Si and glass substrates at different thicknesses of 125 nm and 239 nm. Post-annealing treatment was conducted on the samples at temperature of 500°C and 600°C. From Hall Effect measurement, the lowest resistivity was measured as 4.4 × 10-4 Ωcm and 4.5 × 10-4 Ωcm corresponding to the 239 nm and 125 nm ITO sample, respectively, after post-annealed at 600°C. Using UV-Vis spectrophotometer, the highest transmittance of ~84% at 470 nm was observed with respect to the 125 nm ITO thin films after post-annealed at 500°C. Furthermore, the 500°C post-annealed 125 nm thin film shows highest carrier concentrations of more than 1021 cm-3 and smoothest surface morphology of 0.5 nm root-mean-square, RMS. It is clearly shown that post-annealing treatment on ITO thin films is able to enhance the electrical and optical transmittance properties as compared to the as deposited films.

Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process

2006 ◽  
Vol 45 ◽  
pp. 2355-2361 ◽  
Author(s):  
Patcharaporn Itthivisit ◽  
Samart Kongtaweelert ◽  
Sakda Traisak
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Dip Coating ◽  
Coating Process ◽  
Gravimetric Analysis ◽  
Mixed Solution ◽  
Ito Thin Films

Indium tin oxide (In-Sn-O, ITO) system is typical widely used as transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and window films in p-n heterojunction solar cells because of their’s unique properties of a high visible transparency, good electrical conductivity, and excellent adhesion to the substrate, stable chemical property and easy patterning ability. In this paper, preparation and characterization of Indium tin oxide (ITO) thin films were studied by deposited dip coating process onto glass substrate. The mixing of various molar ratio of indium chloride (InCl3) and tin chloride (SnCl2.2H2O), (In:Sn mole ratio , 9:1, 7:3, 1:1), in acetylacetone were used as the starting solution. The suitable In:Sn ratio for one stoichiometry indium tin oxide (In2Sn2O7) compound were studied via hydrolysis process of mixed solution. The result of thermal gravimetric analysis were used to supported and corrected of calcining temperature. The precipitated powders were calcined at 500 0C and 600 0C. The result of XRD spectrum indicated that the calcined 9:1 powders at 6000C was show the highest stoichiometry of indium tin oxide (In2Sn2O7) compound with a polycrystalline cubic structure. The ITO thin films were studied by deposited dip coating process onto glass substrate with 20 layers at 600 0C for 1 hour. The optical properties, band gap energy and microstructure of ITO thin films were investigated by UV-vis spectrophotometer and Scaning Electron Microscope (SEM) respectively. The result of SEM was shown highly homogeneous surface and average grain size 20 nm with 95% transmittance which corresponding to XRD results. The calculated energy gap of ITO film was 3.40 eV.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

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