Mechanical Property and Processing Investigation of Pulsed Laser Deposited Al2O3 and AlN-TiN Thin Films

Materials ◽  
2004 ◽  
Author(s):  
Xinyu Wang ◽  
Cindy Waters ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Jagannathan Sankar
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Silicon Substrates ◽  
Multilayer Thin Films ◽  
Tin Films ◽  
Si Substrates ◽  
Tin Thin Films

We have grown alumina (Al2O3) and Aluminum Nitride - Titanium Nitride (AlN-TiN) multilayer thin films on (100) silicon substrates using KrF excimer pulsed laser. Hardness, Young’s Modulus and fracture toughness of the films were analyzed using Vickers and nanoindentation methods. The films with thicknesses ranging from 0.2 mm to 1.0 mm were tested under indentation loads as small as 100mN with the MTS nanoindentor up to 3000 mN with the Vickers test. By studying the Al2O3 and AlN-TiN films on the Si substrates we were able to assess the fracture toughness and the nature of the cracking and delamination. The effects of the processing parameters (laser energy and substrate temperature) on these films were studied. The fracture toughness was analyzed by different methods.

Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition

1998 ◽  
Vol 13 (2) ◽  
pp. 368-375 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Mark D. Vaudin ◽  
Peter K. Schenck
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

Pt-coated silicon substrates with strong (111) Pt texture were annealed in an oxidizing atmosphere at temperatures from 500 °C to 750 °C. BaTiO3 thin films were deposited by pulsed laser ablation on the substrates. Observation by transmission electron microscopy showed that the substrate anneal caused the formation of TiO2 in the Pt layer, accompanied by the formation of a high density of faceted protrusions on the Pt surface, particularly at the higher anneal temperatures. The Pt protrusions had (111) facets, parallel to the substrate surface, on which (100)-oriented BaTiO3 grains were observed. BaTiO3 grains with an epitaxial relationship to the Pt lattice were observed on inclined facets of the Pt protrusions [which were not (111) planes], and also on the nonplanar regions of the Pt surface. These epitaxial BaTiO3 grains had (111) preferred orientation relative to the substrate surface. Thus, the BaTiO3 films displayed bimodal growth behavior, with both (100) texture and (111) epitaxy. We propose a model for this behavior based on surface energy considerations.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Apurba Laha ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Actual Nature ◽  
Different Temperatures ◽  
Pt Films

AbstractA study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Okamoto ◽  
T. Ogawa ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
High Laser ◽  
High Laser Energy

ABSTRACTThe smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Energy ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Femtosecond Pulsed Laser

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

The hardnesses and elastic moduli of pulsed laser deposited multilayer AlN/TiN thin films

1999 ◽  
Vol 30 (7) ◽  
pp. 657-665 ◽  
Author(s):  
T.A. Rawdanowicz ◽  
V. Godbole ◽  
J. Narayan ◽  
J. Sankar ◽  
A. Sharma
Keyword(s):  
Thin Films ◽  
Elastic Moduli ◽  
Pulsed Laser ◽  
Tin Thin Films

Elastic Properties of Sputtered Thin Films: Influence of Different Preparation Conditions

1993 ◽  
Vol 308 ◽  
Author(s):  
C.E. Bottani ◽  
M. Elena ◽  
M. Beghi ◽  
G. Ghislotti ◽  
L. Guzman ◽  
...  
Keyword(s):  
Thin Films ◽  
Light Scattering ◽  
Hard Coatings ◽  
Elastic Behaviour ◽  
Internal Stresses ◽  
Pvd Coatings ◽  
Tin Films ◽  
Si Substrates ◽  
Preparation Conditions ◽  
First Results

ABSTRACTThis work presents the first results of a study aimed at better understanding the elastic behaviour of hard coatings produced by various techniques. This is important also in view of the need to be able to control the level of internal stresses, particularly in PVD coatings. It is well known that in extreme cases excessive internal stress can lead to complete film destruction. We devote this paper to reactively magnetron sputtered TiN, one of the most widely used compounds. Thin TiN films of different compositions were deposited on Si substrates and characterized by SEM, AES, XRD and Brillouin light scattering.

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