Elastic Properties of Sputtered Thin Films: Influence of Different Preparation Conditions

1993 ◽  
Vol 308 ◽  
Author(s):  
C.E. Bottani ◽  
M. Elena ◽  
M. Beghi ◽  
G. Ghislotti ◽  
L. Guzman ◽  
...  
Keyword(s):  
Thin Films ◽  
Light Scattering ◽  
Hard Coatings ◽  
Elastic Behaviour ◽  
Internal Stresses ◽  
Pvd Coatings ◽  
Tin Films ◽  
Si Substrates ◽  
Preparation Conditions ◽  
First Results

ABSTRACTThis work presents the first results of a study aimed at better understanding the elastic behaviour of hard coatings produced by various techniques. This is important also in view of the need to be able to control the level of internal stresses, particularly in PVD coatings. It is well known that in extreme cases excessive internal stress can lead to complete film destruction. We devote this paper to reactively magnetron sputtered TiN, one of the most widely used compounds. Thin TiN films of different compositions were deposited on Si substrates and characterized by SEM, AES, XRD and Brillouin light scattering.

Characterization of ZrN Thin Films Deposited by Reactive DC Magnetron Sputtering

2013 ◽  
Vol 770 ◽  
pp. 350-353 ◽  
Author(s):  
Attapol Choeysuppaket ◽  
Nirun Witit-Anun ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Corrosion Resistance ◽  
High Hardness ◽  
Hard Coatings ◽  
Zirconium Nitride ◽  
Tin Films ◽  
Significant Performance ◽  
Ic Technology

In the past decade, many transition metal nitride thin films, especially titanium nitride (TiN) and zirconium nitride (ZrN), have been widely used as hard coatings, decorative coatings, diffusion barriers in IC technology and heat mirrors, as a result of their attractive properties of high hardness, corrosion resistance, thermal stability and electrical resistivity [1-4]. However, the ZrN films have shown significant performance regarding to its higher hardness, better corrosion resistance, lower electrical resistivity and warmer golden colour compared to those of the TiN films. ZrN films have shown significant performance advantages over TiN films [5-.

Mechanical Property and Processing Investigation of Pulsed Laser Deposited Al2O3 and AlN-TiN Thin Films

Materials ◽  
2004 ◽  
Author(s):  
Xinyu Wang ◽  
Cindy Waters ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Jagannathan Sankar
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Silicon Substrates ◽  
Multilayer Thin Films ◽  
Tin Films ◽  
Si Substrates ◽  
Tin Thin Films

We have grown alumina (Al2O3) and Aluminum Nitride - Titanium Nitride (AlN-TiN) multilayer thin films on (100) silicon substrates using KrF excimer pulsed laser. Hardness, Young’s Modulus and fracture toughness of the films were analyzed using Vickers and nanoindentation methods. The films with thicknesses ranging from 0.2 mm to 1.0 mm were tested under indentation loads as small as 100mN with the MTS nanoindentor up to 3000 mN with the Vickers test. By studying the Al2O3 and AlN-TiN films on the Si substrates we were able to assess the fracture toughness and the nature of the cracking and delamination. The effects of the processing parameters (laser energy and substrate temperature) on these films were studied. The fracture toughness was analyzed by different methods.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Fabrication and Evaluation of SiO2 Thin Films on Si Substrates by Microwave Plasma in Various Conditions

2020 ◽  
Vol 140 (4) ◽  
pp. 186-192
Author(s):  
Shumpei Ogawa ◽  
Tatsuya Kuroda ◽  
Yasuyuki Katou ◽  
Hironori Haga ◽  
Hiroki Ishizaki
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Si Substrates

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Finite Element Prediction for the Internal Stresses of (Ti,Al)N Coatings

2016 ◽  
Vol 61 (1) ◽  
pp. 149-152 ◽  
Author(s):  
L.W. Żukowska ◽  
A. Śliwa ◽  
J. Mikuła ◽  
M. Bonek ◽  
W. Kwaśny ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Computer Simulation ◽  
Finite Element ◽  
Experimental Studies ◽  
Single Layer ◽  
Internal Stresses ◽  
Pvd Coatings ◽  
Properties Of Coatings ◽  
Gradient Coatings ◽  
Element Method

The general topic of this paper is the computer simulation with use of finite element method (FEM) for determining the internal stresses of selected gradient and single-layer PVD coatings deposited on the sintered tool materials, including cemented carbides, cermets and Al2O3+TiC type oxide tool ceramics by cathodic arc evaporation CAE-PVD method. Developing an appropriate model allows the prediction of properties of PVD coatings, which are also the criterion of their selection for specific items, based on the parameters of technological processes. In addition, developed model can to a large extent eliminate the need for expensive and time-consuming experimental studies for the computer simulation. Developed models of internal stresses were performed with use of finite element method in ANSYS environment. The experimental values of stresses were calculated using the X-ray sin2ψ technique. The computer simulation results were compared with the experimental results. Microhardness and adhesion as well as wear range were measured to investigate the influence of stress distribution on the mechanical and functional properties of coatings. It was stated that occurrence of compressive stresses on the surface of gradient coating has advantageous influence on their mechanical properties, especially on microhardness. Absolute value reduction of internal stresses in the connection zone in case of the gradient coatings takes profitably effects on improvement the adhesion of coatings. It can be one of the most important reasons of increase the wear resistance of gradient coatings in comparison to single-layer coatings.

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