Study of Low-Temperature Wafer Bonding With Au-Au Bonding Technique

2008 ◽  
Author(s):  
H. Kurotaki ◽  
H. Shinohara ◽  
H. Kobayashi ◽  
J. Mizuno ◽  
S. Shoji
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Diffusion Bonding ◽  
Low Temperatures ◽  
The Other ◽  
High Brightness ◽  
Metal Bonding ◽  
Metal Diffusion ◽  
Integrated Devices ◽  
Bonding Technique

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

A low-temperature wafer bonding technique using patternable materials

2002 ◽  
Vol 12 (5) ◽  
pp. 611-615 ◽  
Author(s):  
C-T Pan ◽  
H Yang ◽  
S-C Shen ◽  
M-C Chou ◽  
H-P Chou
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Technique

scholarly journals Testing and Applications of Non-Linear Wave Shaping Circuits Based on Zener Diodes at Cryogenic Temperatures

2017 ◽  
Vol 13 (4) ◽  
pp. 4910-4918
Author(s):  
A. M. Abd El-Maksood
Keyword(s):  
Low Temperature ◽  
Low Temperatures ◽  
The Other ◽  
Electronic Systems ◽  
Linear Wave ◽  
Cryogenic Temperatures ◽  
Temperature Variations ◽  
Wide Range ◽  
Non Linear ◽  
The Stability

            Applications of wave-shaping clipping circuits based on Zener diodes are of great interest in a wide range of modern electronic systems. As well, given the strong interest in space research and trips to distant planets, where the journey takes long periods. Therefore, the matter requires reliance on electronic systems with special specifications commensurate with the nature of the extremely low-temperature environments, down to cryogenic level (around 90 K). So, the present paper was concerned with studying the stability of the performance of different non-linear wave-shaping systems, based on silicon Zener diodes, whenever operates at very low temperatures down to cryogenic levels. From which, it is clear that for BZX79-C4V7 and BZX79-C5V6 Zeners, such electronic systems were shown to be insensitive to temperature variations. On the other hand, low breakdown voltage Zeners (BZV86-1V4 and BZX83-C3V6), the clipping edges were shown to be increased with lowering temperatures from 300 K down to 93 K. Finally, for Zener diodes with VZ greater than 6.0 V (BZX83-C6V8 and BZX55C9V1), the temperature coefficient is positive, so the clipping edges decrease with lowering temperatures, for the same range of temperatures.

Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EC02 ◽  
Author(s):  
Ran He ◽  
Masahisa Fujino ◽  
Akira Yamauchi ◽  
Tadatomo Suga
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Bonding Technique

Annual Rhythm of Cambial Activity in Streblus Asper

IAWA Journal ◽  
1987 ◽  
Vol 8 (3) ◽  
pp. 275-283 ◽  
Author(s):  
Sagheer Ajmal ◽  
Muhammad Iqbal
Keyword(s):  
Cell Division ◽  
Low Temperature ◽  
Low Temperatures ◽  
Relative Proportion ◽  
Cambial Activity ◽  
The Other ◽  
High Humidity ◽  
Growth Season ◽  
Fusiform Initials ◽  
Streblus Asper

Cambial strueture and aetivity of Streblus asper Lour. vary with the loeal c1imate. The eells start swelling eady in May prior to the onset of peric1inal divisions whieh are most frequent in September. The cell division stops in Oetober indieating the approach of dormaney. During the growth season, initiation as well as eessation of the xylem produetion preeedes that of phloem. High temperatures induee the eambial reaetivation. Onee initiated, the aetivity eontinues at relatively low temperatures. Hot and moderately humid eonditions in June favour xylogenesis whereas phloem differentiation begins at relatively low temperature and high humidity in July. The eoneurrent differentiation of xylem and phloem has its peak in August-September. The size and relative proportion of eambial initials change with the season. Fusiform initials are shorter and broader during the rainy season (July-September) than during the rest of the year. Tetraseriate rays and tall rays outnumber the other types of rays throughout the year.

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