Zinc oxide-based transparent conductive oxide films prepared by pulsed magnetron sputtering from powder targets: Process features and film properties

2006 ◽  
Vol 24 (5) ◽  
pp. 1782-1789 ◽  
Author(s):  
P. J. Kelly ◽  
Y. Zhou
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Oxide Films ◽  
Transparent Conductive Oxide ◽  
Film Properties ◽  
Conductive Oxide ◽  
Pulsed Magnetron

The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets

2004 ◽  
Vol 447-448 ◽  
pp. 33-39 ◽  
Author(s):  
Y. Zhou ◽  
P.J. Kelly ◽  
A. Postill ◽  
O. Abu-Zeid ◽  
A.A. Alnajjar
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Pulsed Magnetron

Comparative study on early stages of film growth for transparent conductive oxide films deposited by dc magnetron sputtering

2008 ◽  
Vol 516 (14) ◽  
pp. 4598-4602 ◽  
Author(s):  
Yasushi Sato ◽  
Mikihiro Taketomo ◽  
Norihiro Ito ◽  
Amica Miyamura ◽  
Yuzo Shigesato
Keyword(s):  
Magnetron Sputtering ◽  
Comparative Study ◽  
Film Growth ◽  
Oxide Films ◽  
Transparent Conductive Oxide ◽  
Dc Magnetron Sputtering ◽  
Early Stages ◽  
Conductive Oxide

ZnO:Al films prepared by inline DC magnetron sputtering

2014 ◽  
Vol 3 (1) ◽  
Author(s):  
Astrid Bingel ◽  
Kevin Füchsel ◽  
Norbert Kaiser ◽  
Andreas Tünnermann
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conductive Oxide ◽  
Production Costs ◽  
Dc Magnetron Sputtering ◽  
High Quality ◽  
Conductive Oxide ◽  
Aluminum Doped Zinc Oxide

AbstractAluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide (TCO) materials that can substitute the high-quality but costly indium tin oxide (ITO). To ensure high-quality films as well as moderate production costs, inline DC magnetron sputtering was chosen to deposit thin AZO films. The influence of sputter gas pressure, substrate temperature, and film thickness on the electrical, optical, and structural properties was analyzed. The resistivity reaches a minimum of 1.3×10

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