On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO[sub 2] etching process

2007 ◽  
Vol 25 (6) ◽  
pp. 1808 ◽  
Author(s):  
Butsurin Jinnai ◽  
Toshiyuki Orita ◽  
Mamoru Konishi ◽  
Jun Hashimoto ◽  
Yoshinari Ichihashi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Etching Process ◽  
Charge Accumulation

Sharp Needles: Fabrication of Tungsten Nanotips by AC Electrochemical Etching and Laser Enhanced Etching for Nanoprobing on Interconnects of Advanced Technology Nodes.

2013 ◽  
Vol 1553 ◽  
Author(s):  
M. K. Dawood ◽  
Z.H. Mai ◽  
T. H. Ng ◽  
H. Tan ◽  
P.K. Tan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Irradiation ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Advanced Technology ◽  
Radius Of Curvature ◽  
20 Nm ◽  
Technology Nodes ◽  
Contact Size

ABSTRACTSharper nanotips are required for application in nanoprobing systems due to a shrinking contact size with each new transistor technology node. We describe a two-step etching process to fabricate W nanotips with controllable tip dimensions. The first process is an optimized AC electrochemical etching in KOH to fabricate nanotips with a radius of curvature (ROC) down to 90 nm. This was followed by a secondary nanotip sharpening process by laser irradiation in KOH. High aspect ratio nanotips with ROC close to 20 nm were obtained. Finally we demonstrate the application of the fabricated nanotips for nanoprobing on advanced technology SRAM devices.

Direct-Writing of High-Aspect-Ratio Trenches in Silicon

1986 ◽  
Vol 75 ◽  
Author(s):  
G. V. Treyz ◽  
R. Beach ◽  
R. M. Osgood
Keyword(s):  
Experimental Data ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Etch Rate ◽  
Crystalline Silicon ◽  
Etching Process ◽  
Direct Writing ◽  
Variable Curvature ◽  
Model Predictions

AbstractDeep trenches have been etched in crystalline silicon with polarization-controlled, variable-curvature walls. Scan speeds of up to 10mm/s have been demonstrated. A model of the etching process has been developed which is based on a local, melt-enhanced etch rate. Comparisons of model predictions and experimental data are presented.

Controlled fabrication of periodically high-aspect ratio CVD-diamond nanopillar arrays by pure oxygen etching process

2016 ◽  
Vol 155 ◽  
pp. 61-66 ◽  
Author(s):  
Peng Sun ◽  
Chengchun Tang ◽  
Xiaoxiang Xia ◽  
Zehan Yao ◽  
Baogang Quan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Cvd Diamond ◽  
Etching Process ◽  
Pure Oxygen ◽  
Nanopillar Arrays ◽  
Oxygen Etching

High aspect ratio TSV etching process for high-capacitor

2014 ◽  
Author(s):  
Takahide Murayama ◽  
Toshiyuki Sakuishi ◽  
Yasuhiro Morikawa ◽  
Noriaki Tani ◽  
Kazuya Saitou
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Etching Process
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