Comparison of deep silicon etching using SF[sub 6]/C[sub 4]F[sub 8] and SF[sub 6]/C[sub 4]F[sub 6] plasmas in the Bosch process
2017 ◽
Vol 35
(3)
◽
pp. 03E113
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2019 ◽
Vol 18
(02)
◽
pp. 1
◽
2018 ◽
Vol 36
(3)
◽
pp. 03E109
◽
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2002 ◽
Vol 20
(6)
◽
pp. 2123
◽
Keyword(s):