Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

2012 ◽  
Vol 30 (3) ◽  
pp. 031301 ◽  
Author(s):  
S. Bouchoule ◽  
L. Vallier ◽  
G. Patriarche ◽  
T. Chevolleau ◽  
C. Cardinaud
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Surface Composition ◽  
X Ray ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Inp Surface

Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy

2017 ◽  
Vol 214 (11) ◽  
pp. 1700233 ◽  
Author(s):  
Yukako Kato ◽  
Hiroyuki Kawashima ◽  
Toshiharu Makino ◽  
Masahiko Ogura ◽  
Aboulaye Traoré ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Boron Doped

Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN

2002 ◽  
Vol 722 ◽  
Author(s):  
A. Ramam ◽  
S. Tripathy ◽  
S.J. Chua
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Etched Surface ◽  
Mg Doped

AbstractWe have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.

SYNTHESIS AND CHARACTERIZATION OF TERNARY AL-C-N COMPOUND

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1132-1137 ◽  
Author(s):  
N. JIANG ◽  
S. XU ◽  
K. N. OSTRIKOV ◽  
E. L. TSAKADZE ◽  
J. D. LONG ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Flow Rate Ratio ◽  
In Situ Observation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled

An attempt for modification of carbon nitride material by introduction of Al to form a ternary Al-C-N compound in a thin film deposited using inductively coupled plasma (ICP) assisted DC magnetron sputtering is reported. Optical emission spectroscopy (OES) is used for in-situ observation and identification of reactive species. The films were characterized using x-ray photoelectron spectroscopy (XPS) and x-ray diffraction spectroscopy (XRD). The results indicate that C-N bond is formed in the plasma. The XPS narrow scam spectra confirm the existence of C-Al, sp2C-N and sp3C-N bonds. Elemental proportion of carbon increases with the CH4/N2 flow rate ratio, and has a tendency to saturate. The film is dominated by c-AlN (111), mixed with Al4C3 and AlCN ternary compound.

Inductively coupled plasma etching for delineation of InAs/GaSb pixels

2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

2005 ◽  
Vol 34 (6) ◽  
pp. 740-745 ◽  
Author(s):  
E. Laffosse ◽  
J. Baylet ◽  
J. P. Chamonal ◽  
G. Destefanis ◽  
G. Cartry ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled
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