Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

2019 ◽  
Vol 37 (6) ◽  
pp. 060905 ◽  
Author(s):  
Igor Krylov ◽  
Xianbin Xu ◽  
Yuanshen Qi ◽  
Kamira Weinfeld ◽  
Valentina Korchnoy ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Structure And Properties ◽  
Layer Deposition

scholarly journals Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015218
Author(s):  
Changbong Yeon ◽  
Jaesun Jung ◽  
Hyeran Byun ◽  
Kok Chew Tan ◽  
Taeho Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Alkyl Halides ◽  
Layer Deposition ◽  
Tertiary Alkyl

Atomic layer deposition of ultra-trace Pt catalysts onto a titanium nitride nanowire array for electrocatalytic methanol oxidation

2019 ◽  
Vol 55 (88) ◽  
pp. 13283-13286 ◽  
Author(s):  
Junwei Sun ◽  
Xin Wang ◽  
Yanyan Song ◽  
Qianqian Wang ◽  
Yumei Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Methanol Oxidation ◽  
Current Density ◽  
Nanowire Array ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Pt Catalysts ◽  
Layer Deposition ◽  
Ultra Trace

Atomic layer deposition of ultra-trace Pt onto three-dimensional titanium nitride nanowire array was realized, and the obtained catalyst shows a much larger mass current density than commercial Pt/C towards electrocatalytic methanol oxidation.

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

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