Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p‐type) HgCdTe

ABSTRACTVariable magnetic field Hall effect, photoluminescence (PL) and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. The use of lattice-matched Yttria-stablized Zirconia substrates also provides evidence of a p-type layer.

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Resistivity and high magnetic field hall effect measurements on as-grown p-type HgZnTe

Journal of Crystal Growth ◽

10.1016/0022-0248(90)91098-b ◽

1990 ◽

Vol 101 (1-4) ◽

pp. 872-875 ◽

Cited By ~ 1

Author(s):

P. Fajardo ◽

J. Sanz-Maudes ◽

T. Rodriguez ◽

M.A. González ◽

R. Triboulet

Keyword(s):

Magnetic Field ◽

Hall Effect ◽

High Magnetic Field ◽

Hall Effect Measurements ◽

P Type

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Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/31.3.2023 ◽

2018 ◽

Vol 31 (3) ◽

pp. 20

Author(s):

Sarmad M. M. Ali ◽

Alia A.A. Shehab ◽

Samir A. Maki

Keyword(s):

Activation Energy ◽

Electrical Conductivity ◽

Hall Effect ◽

Carrier Concentration ◽

Hall Mobility ◽

Cu Doping ◽

Before And After ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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The Study of p-n and Schottky Junction for Magnetodiode

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.663 ◽

2011 ◽

Vol 378-379 ◽

pp. 663-667 ◽

Cited By ~ 2

Author(s):

Toempong Phetchakul ◽

Wittaya Luanatikomkul ◽

Chana Leepattarapongpan ◽

E. Chaowicharat ◽

Putapon Pengpad ◽

...

Keyword(s):

Magnetic Field ◽

Electrical Properties ◽

Simulation Model ◽

Hall Effect ◽

Schottky Junction ◽

Field Sensitivity ◽

Field Response ◽

Type Semiconductor ◽

Simulation Results ◽

P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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Hall Effect Measurements in Rotating Magnetic Field on Sub-30-nm Silicon Nanowires Fabricated by a Top–Down Approach

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3023060 ◽

2020 ◽

Vol 67 (11) ◽

pp. 5201-5208

Author(s):

Akshara Verma ◽

Kiril Borisov ◽

Stephen Connaughton ◽

Plamen Stamenov

Keyword(s):

Magnetic Field ◽

Hall Effect ◽

Silicon Nanowires ◽

Rotating Magnetic Field ◽

Top Down ◽

Hall Effect Measurements

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Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.633 ◽

2006 ◽

Vol 527-529 ◽

pp. 633-636 ◽

Cited By ~ 5

Author(s):

Sylvie Contreras ◽

Marcin Zielinski ◽

Leszek Konczewicz ◽

Caroline Blanc ◽

Sandrine Juillaguet ◽

...

Keyword(s):

Temperature Dependence ◽

Hall Effect ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Temperature Dependent ◽

Large N ◽

Hall Effect Measurements ◽

Van Der Pauw ◽

P Type ◽

Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

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