Early stages in thin film metal–silicon and metal–SiO2 reactions under rapid thermal annealing conditions: The rapid thermal annealing/transmission electron microscopy technique

1986 ◽  
Vol 4 (6) ◽  
pp. 1404 ◽  
Author(s):  
Menachem Natan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Transmission Electron Microscopy Technique ◽  
Early Stages ◽  
Microscopy Technique ◽  
Annealing Conditions ◽  
Transmission Electron

Recrystallization of Implanted LPCVD Amorphous Si Films Using Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
R. Kwor ◽  
S. M. Tang ◽  
N. S. Alvi
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Hall Effect Measurement ◽  
Temperature Coefficient Of Resistance ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films

AbstractThe effect of rapid thermal annealing on the crystallization of arsenic and boron implanted amorphous silicon films is studied. Amorphous Si films of 4000 Å were deposited using LPCVD and implanted with arsenic or boron to doses of 5 × 1013, 5 × 1014, and 5 × 1015 cm−2. These films were then annealed using an Eaton Nova-400 RTA system (with temperature ranging from 900 to 1200 °C and dwell time ranging from 1 to 30 sec). The annealed films were studied using transmission electron microscopy, Hall effect measurement and temperature coefficient of resistance measurement. The optimal annealing conditions for the films were found.

Evidence of Co/SiO2 reaction during rapid thermal annealing

1993 ◽  
Vol 8 (3) ◽  
pp. 467-472 ◽  
Author(s):  
Herbert L. Ho ◽  
Tue Nguyen ◽  
Julius C. Chang ◽  
Brian Machesney ◽  
Peter Geiss
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Oxide Phase ◽  
Transmission Electron ◽  
Wet Etch ◽  
Scanning Electron

Cobalt (Co)/silicon dioxide (SiO2) reactions during rapid thermal annealing (RTA) in an N2 ambient have been investigated. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that islands consisting of Co and the cobalt oxide phase, Co3O4, form during high-temperature anneals (30 s−10 min at 800 °C). After a selective wet etch to remove the islands, groove-like features are produced in the SiO2 layer. The morphologies of the islands and grooves are strikingly similar, which strongly suggest that Co and the underlying SiO2 layer have reacted, most likely to form Co3O4. We propose that small concentrations of O2 are necessary to promote Co/SiO2 interactions.

Structure and Lattice Location of Ge Implanted 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 623-626
Author(s):  
Thomas Kups ◽  
Katja Tonisch ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Alexander Konkin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solutions ◽  
Lattice Location ◽  
Transmission Electron

Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge concentrations below 10%. At higher implantation doses followed by annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing incorporation of Ge on Si lattice sites.

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