Structure and Lattice Location of Ge Implanted 4H-SiC
2008 ◽
Vol 600-603
◽
pp. 623-626
Keyword(s):
Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge concentrations below 10%. At higher implantation doses followed by annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing incorporation of Ge on Si lattice sites.
1993 ◽
Vol 8
(3)
◽
pp. 467-472
◽
1986 ◽
Vol 4
(6)
◽
pp. 1404
◽
1970 ◽
Vol 28
◽
pp. 412-413
2019 ◽
Vol 963
◽
pp. 399-402
◽
1999 ◽
Vol 48
(5)
◽
pp. 511-518
◽