Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control

1994 ◽  
Author(s):  
Bruce W. Peuse ◽  
Allan Rosekrans
Keyword(s):  
Thermal Expansion ◽  
Temperature Control ◽  
Thermal Expansion Measurement

In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement

1993 ◽  
Vol 303 ◽  
Author(s):  
Bruce Peuse ◽  
Allan Rosekrans
Keyword(s):  
Thermal Expansion ◽  
Temperature Control ◽  
Measurement Technique ◽  
Preliminary Data ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Wafer Temperature ◽  
Thermal Expansion Measurement

ABSTRACTA new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via an optical micrometer mechanism. The expansion measurement technique and its implementation into a rapid thermal processing system for temperature control are described. Preliminary data show the wafer to wafer temperature repeatability to be 1% (3-σ) using this technique.

A High Angle, Double Tilting Cold Stage for the AEI EM7

1974 ◽  
Vol 32 ◽  
pp. 450-451
Author(s):  
P.R. Swann ◽  
A.E. Lloyd
Keyword(s):  
Habit Plane ◽  
Temperature Control ◽  
Tilt Angle ◽  
Cooling System ◽  
Thermal Drift ◽  
High Angle ◽  
Cold Stage ◽  
High Degree ◽  
Better Than

Figure 1 shows the design of a specimen stage used for the in situ observation of phase transformations in the temperature range between ambient and −160°C. The design has the following features a high degree of specimen stability during tilting linear tilt actuation about two orthogonal axes for accurate control of tilt angle read-out high angle tilt range for stereo work and habit plane determination simple, robust construction temperature control of better than ±0.5°C minimum thermal drift and transmission of vibration from the cooling system.

scholarly journals Phase Transition and Coefficients of Thermal Expansion in Al2−xInxW3O12 (0.2 ≤ x ≤ 1)

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4021
Author(s):  
Andrés Esteban Cerón Cerón Cortés ◽  
Anja Dosen ◽  
Victoria L. Blair ◽  
Michel B. Johnson ◽  
Mary Anne White ◽  
...  
Keyword(s):  
Phase Transition ◽  
Thermal Expansion ◽  
Thermal Shock ◽  
Monoclinic Phase ◽  
Ceramic Materials ◽  
Precipitation Method ◽  
Scanning Calorimetry ◽  
Orthorhombic Crystal ◽  
Co Precipitation

Materials from theA2M3O12 family are known for their extensive chemical versatility while preserving the polyhedral-corner-shared orthorhombic crystal system, as well as for their consequent unusual thermal expansion, varying from negative and near-zero to slightly positive. The rarest are near-zero thermal expansion materials, which are of paramount importance in thermal shock resistance applications. Ceramic materials with chemistry Al2−xInxW3O12 (x = 0.2–1.0) were synthesized using a modified reverse-strike co-precipitation method and prepared into solid specimens using traditional ceramic sintering. The resulting materials were characterized by X-ray powder diffraction (ambient and in situ high temperatures), differential scanning calorimetry and dilatometry to delineate thermal expansion, phase transitions and crystal structures. It was found that the x = 0.2 composition had the lowest thermal expansion, 1.88 × 10−6 K−1, which was still higher than the end member Al2W3O12 for the chemical series. Furthermore, the AlInW3O12 was monoclinic phase at room temperature and transformed to the orthorhombic form at ca. 200 °C, in contrast with previous reports. Interestingly, the x = 0.2, x = 0.4 and x = 0.7 materials did not exhibit the expected orthorhombic-to-monoclinic phase transition as observed for the other compositions, and hence did not follow the expected Vegard-like relationship associated with the electronegativity rule. Overall, compositions within the Al2−xInxW3O12 family should not be considered candidates for high thermal shock applications that would require near-zero thermal expansion properties.

scholarly journals Correction: Temperature control in DRIFT cells used for in situ and operando studies: where do we stand today?

2020 ◽  
Vol 22 (47) ◽  
pp. 27912-27912
Author(s):  
Ignacio Melián-Cabrera
Keyword(s):  
Temperature Control ◽  
Chem Phys ◽  
Phys Chem Chem Phys ◽  
Operando Studies

Correction for ‘Temperature control in DRIFT cells used for in situ and operando studies: where do we stand today?’ by Ignacio Melián-Cabrera, Phys. Chem. Chem. Phys., 2020, DOI: 10.1039/d0cp04352d.

scholarly journals Thermal expansion of La-based BMG studied by in situ high-energy X-ray diffraction

2010 ◽  
Vol 504 ◽  
pp. S155-S158 ◽  
Author(s):  
J. Bednarcik ◽  
C. Curfs ◽  
M. Sikorski ◽  
H. Franz ◽  
J.Z. Jiang
Keyword(s):  
Thermal Expansion ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Isobaric Thermal Expansion and Isothermal Compression of Powdered NiFe Based Alloys Studied by In-Situ EDXRD

2014 ◽  
Vol 126 (1) ◽  
pp. 128-129
Author(s):  
D. Olekšáková ◽  
J. Füzer ◽  
P. Kollár ◽  
J. Bednarčík ◽  
C. Lathe
Keyword(s):  
Thermal Expansion ◽  
Isothermal Compression ◽  
Isobaric Thermal Expansion

Determination of Poisson's Ratio of Thin low-k Films using Bidirectional Thermal Expansion Measurement

2006 ◽  
Vol 914 ◽  
Author(s):  
Jiping Ye ◽  
Satoshi Shimizu ◽  
Shigeo Sato ◽  
Nobuo Kojima ◽  
Junnji Noro
Keyword(s):  
Thermal Expansion ◽  
Temperature Gradient ◽  
Young’S Modulus ◽  
Poisson’S Ratio ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Polymer Materials ◽  
Poisson's Ratio ◽  
Thermal Expansion Measurement ◽  
Low K

AbstractA recently developed bidirectional thermal expansion measurement (BTEM) method was applied to different types of low-k films to substantiate the reliability of the Poisson's ratio found with this technique and thereby to corroborate its practical utility. In this work, the Poisson's ratio was determined by obtaining the temperature gradient of the biaxial thermal stress from substrate curvature measurements, the temperature gradient of the whole thermal expansion strain along the film thickness from x-ray reflectivity (XRR) measurements, and reduced modulus of the film from nanoindentation measurements. For silicon oxide-based SiOC film having a thickness of 382.5 nm, the Poisson's ratio, Young's modulus and thermal extension coefficient (TEC) were determined to be Vf = 0.26, αf =21 ppm/K and Ef =9,7 GPa. These data are close to the levels of metals and polymers rather than the levels of fused silicon oxide, which is characterized by Vf = 0.17 and Er = 69.6 GPa. The alkyl component in the silicon oxide-based framework is thought to act as an agent in reducing the modulus and elevating the Poisson's ratio in SiOC low-k materials. In the case of an organic polymer SiLK film with a thickness of 501.5 nm, the Poisson's ratio, Young's modulus and TEC were determined to be Vf = 0.39, αf =74 ppm/K and Er =3.1 GPa, which are in the typical range of V= 0.34~0.47 with E =1.0~10 GPa for polymer materials. From the viewpoint of the relationship between the Poisson's ratio and Young's modulus as classified by different material types, the Poisson's ratios found for the silicon oxide-based SiOC and organic SiLK films are reasonable values, thereby confirming that BTEM is a reliable and effective method for evaluating the Poisson's ratio of thin films.

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