scholarly journals Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation

2019 ◽  
Vol 5 (5) ◽  
pp. eaav3430 ◽  
Author(s):  
Enxiu Wu ◽  
Yuan Xie ◽  
Jing Zhang ◽  
Hao Zhang ◽  
Xiaodong Hu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical Methods ◽  
Light Illumination ◽  
Switching Speed ◽  
Band Engineering ◽  
As Doping ◽  
Noticeable Improvement ◽  
Photo Detection

Energy band engineering is of fundamental importance in nanoelectronics. Compared to chemical approaches such as doping and surface functionalization, electrical and optical methods provide greater flexibility that enables continuous, reversible, and in situ band tuning on electronic devices of various kinds. In this report, we demonstrate highly effective band modulation of MoTe2 field-effect transistors through the combination of electrostatic gating and ultraviolet light illumination. The scheme can achieve reversible doping modulation from deep n-type to deep p-type with ultrafast switching speed. The treatment also enables noticeable improvement in field-effect mobility by roughly 30 and 2 times for holes and electrons, respectively. The doping scheme also provides good spatial selectivity and allows the building of a photo diode on a single MoTe2 flake with excellent photo detection and photovoltaic performances. The findings provide an effective and generic doping approach for a wide variety of 2D materials.

scholarly journals Graphene Channels Interfaced with Quantum Dots in Field Effect Transistors: Electrical and Photo-Induced Effects

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1597-1603
Author(s):  
Xin Miao ◽  
Samarth Trivedi ◽  
Haim Grebel
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Hole Array ◽  
Light Illumination ◽  
Anodized Aluminum ◽  
Transistor Channel ◽  
Anodized Aluminum Oxide ◽  
Hexagonal Hole ◽  
White Light Illumination

ABSTRACTGraphene-based field effect transistors (GFETs) were assessed when interfaced with well separated and precisely placed core/shell CdSe/ZnS semiconductor quantum dot (QD) arrays. The QDs were imbedded in a hexagonal hole-array, which was formed in a layer of anodized aluminum oxide on Si/SiO2substrates. Graphene (single, or two layers), grown by chemical vapor deposition (CVD) on Cu foils, was transferred and placed on top of the QDs imbedded films and served as the transistor channel. Electrical characteristics under white-light illumination at various biasing conditions revealed that the photo current was decreasing upon increasing biasing. The device's photoluminescence (PL) as a function of both the drain-source and gate-source potentials also reduced as a function of the potential biases. We observed two maxima in the PL data while tilting the sample with respect to the incident laser beam. We attributed it to the optimal coupling between the incident and the emission wavelengths to resonating surface modes.

scholarly journals Tuning the ambipolar behaviour of organic field effect transistors via band engineering

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035202 ◽  
Author(s):  
P. R. Warren ◽  
J. F. M. Hardigree ◽  
A. E. Lauritzen ◽  
J. Nelson ◽  
M. Riede
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Band Engineering

Reversible photo-induced doping in WSe2 field effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7358-7363 ◽  
Author(s):  
Xuyi Luo ◽  
Kraig Andrews ◽  
Tianjiao Wang ◽  
Arthur Bowman ◽  
Zhixian Zhou ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Visible Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Light Illumination ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Low Intensity ◽  
Visible Light Illumination

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm−2).

Electrical and Photo-Induced Effects in Graphene Channels When Interfaced with Quantum Dots

2015 ◽  
Vol 1727 ◽  
Author(s):  
Xin Miao ◽  
Samarth Trivedi ◽  
Haim Grebel
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Quantum Dots ◽  
Light Illumination ◽  
Electrical Characteristics ◽  
Channel Response ◽  
White Light Illumination

ABSTRACTField effect transistors with graphene channels were interfaced with arrays of semiconductor quantum dots (QD). The electrical characteristics of the elements were assessed. The channel response to white light illumination was also assessed as a function of drain-source and gate-source biases.

High-power Organic Field-effect Transistors Using a Three-dimensional Structure

2010 ◽  
Vol 1270 ◽  
Author(s):  
M. Uno ◽  
Yuri Hirose ◽  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
Yasuhiro Nakazawa ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Three Dimensional ◽  
Columnar Structure ◽  
Dimensional Structure ◽  
High Current ◽  
Organic Field Effect Transistors ◽  
Switching Speed

AbstractThree-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

scholarly journals Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

2013 ◽  
Vol 102 (19) ◽  
pp. 192103 ◽  
Author(s):  
S. Wirths ◽  
A. T. Tiedemann ◽  
Z. Ikonic ◽  
P. Harrison ◽  
B. Holländer ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Band Engineering

scholarly journals Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 181 ◽  
Author(s):  
Hongliang Lu ◽  
Bin Lu ◽  
Yuming Zhang ◽  
Yimen Zhang ◽  
Zhijun Lv
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Tunneling Current ◽  
Drain Current ◽  
Device Structure ◽  
Band Engineering ◽  
Novel Device ◽  
Analytical Potential ◽  
Good Agreement

The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the device performance. The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed device is developed and tunneling current is also calculated. Good agreement of the modeled results with numerical simulations verifies the validation of our model. With significantly reduced simulation time while acceptable accuracy, the model would be helpful for the further investigation of TFET-based circuit simulations.

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