scholarly journals Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 181 ◽  
Author(s):  
Hongliang Lu ◽  
Bin Lu ◽  
Yuming Zhang ◽  
Yimen Zhang ◽  
Zhijun Lv
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Tunneling Current ◽  
Drain Current ◽  
Device Structure ◽  
Band Engineering ◽  
Novel Device ◽  
Analytical Potential ◽  
Good Agreement

The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the device performance. The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed device is developed and tunneling current is also calculated. Good agreement of the modeled results with numerical simulations verifies the validation of our model. With significantly reduced simulation time while acceptable accuracy, the model would be helpful for the further investigation of TFET-based circuit simulations.

An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

2019 ◽  
Vol 58 (9) ◽  
pp. 095001
Author(s):  
Jiarui Bao ◽  
Shuyan Hu ◽  
Guangxi Hu ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Graphene Nanoribbon

Explicit drain current model of junctionless double-gate field-effect transistors

2013 ◽  
Vol 89 ◽  
pp. 134-138 ◽  
Author(s):  
Ashkhen Yesayan ◽  
Fabien Prégaldiny ◽  
Jean-Michel Sallese
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Double Gate

ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

2010 ◽  
Vol 09 (04) ◽  
pp. 263-267
Author(s):  
A. Sh. HUSSEIN ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
S. M. THAHAB
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Carrier Confinement ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Good Agreement ◽  
Mg Doped

AlGaN/GaN -based heterostructure field-effect transistors (HFETs) with and without Mg -doped semi-insulating carrier confinement layer were simulated by using ISE TCAD software, respectively. The detailed study on the electrical properties of these samples was performed. The effect of inserting Mg -doped GaN layer on the source–drain (S–D) leakage current was investigated. Higher values of drain current and extrinsic transconductance were achieved with conventional HFETs (without Mg -doped). The source-to-drain (S–D) leakage current of conventional HFETs was also higher. However, the S–D leakage current was reduced with the insertion of the Mg -doped semi-insulating carrier confinement layer. Our results are in good agreement with the experimental results obtained by other researchers.

A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model

2013 ◽  
Vol 60 (2) ◽  
pp. 848-855 ◽  
Author(s):  
Juan Pablo Duarte ◽  
Sung-Jin Choi ◽  
Dong-Il Moon ◽  
Jae-Hyuk Ahn ◽  
Jee-Yeon Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Core Model

Comparative Performance Analysis of Multi Gate Tunnel Field Effect Transistors

2016 ◽  
Vol 41 ◽  
pp. 1-8 ◽  
Author(s):  
T.S. Arun Samuel ◽  
M. Karthigai Pandian
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Analytical Models ◽  
Comparative Performance ◽  
Novel Device ◽  
Device Structures ◽  
And Performance ◽  
Dual Material

In this paper, analytical modelling and performance analysis of novel device structures such as single gate SOI Tunnel Field Effect transistor (SG SOI TFET), Dual-Material Gate TFET (DMG TFET) and Dual Material Double Gate TFET (DMDG TFET) are proposed. The performance of the three devices is studied and compared in terms of surface potential, electric field and drain current. The DMDG TFET shows better performance in suppressing leakage current and enhancing ION current than the SG SOI TFET and DMG TFET. The analytical models of the devices are found to be in good agreement with the results obtained using two-dimensional TCAD device simulator.

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