Device for measuring the parameters of an ion beam of circular cross section, permitting estimation of the beam emittance per pulse

1997 ◽  
Vol 42 (9) ◽  
pp. 1104-1105
Author(s):  
L. P. Veresov ◽  
O. P. Veresov ◽  
L. P. Skripal’
Keyword(s):  
Cross Section ◽  
Ion Beam ◽  
Circular Cross Section ◽  
Beam Emittance

SAF file: It's really three dimensional file

2018 ◽  
Vol 14 (1) ◽  
pp. 1
Author(s):  
Prof. Dr. Jamal Aziz Mehdi
Keyword(s):  
Cross Section ◽  
Root Canal ◽  
Three Dimensional ◽  
Circular Cross Section ◽  
Circular Motion ◽  
Root Canal Treatment ◽  
Metal Core ◽  
Rotating Blade

The biological objectives of root canal treatment have not changed over the recentdecades, but the methods to attain these goals have been greatly modified. Theintroduction of NiTi rotary files represents a major leap in the development ofendodontic instruments, with a wide variety of sophisticated instruments presentlyavailable (1, 2).Whatever their modification or improvement, all of these instruments have onething in common: they consist of a metal core with some type of rotating blade thatmachines the canal with a circular motion using flutes to carry the dentin chips anddebris coronally. Consequently, all rotary NiTi files will machine the root canal to acylindrical bore with a circular cross-section if the clinician applies them in a strictboring manner

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

1997 ◽  
Author(s):  
J. Douglass ◽  
T. D. Myers ◽  
F. Tsai ◽  
R. Ketcheson ◽  
J. Errett
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Yield Loss ◽  
Process Analysis ◽  
Ion Beam ◽  
Yield Improvement ◽  
Transmission Electron ◽  
Defect Mechanism ◽  
Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

The Novel TEM Sample Preparation Approach for Targeted via with Barrier/Cu Seed Layer Inspection

2009 ◽  
Author(s):  
Wen-Fei Hsieh ◽  
Shih-Hsiang Tseng ◽  
Bo Min She
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Seed Layer ◽  
Target Location ◽  
Process Development ◽  
Process Integration ◽  
Ion Beam ◽  
Main Tool ◽  
Dual Beam ◽  
Sample Preparation Procedure

Abstract In this study, an FIB-based cross section TEM sample preparation procedure for targeted via with barrier/Cu seed layer is introduced. The dual beam FIB with electron beam for target location and Ga ion beam for sample milling is the main tool for the targeted via with barrier/Cu seed layer inspection. With the help of the FIB operation and epoxy layer protection, ta cross section TEM sample at a targeted via with barrier/Cu seed layer could be made. Subsequent TEM inspection is used to verify the quality of the structure. This approach was used in the Cu process integration performance monitor. All these TEM results are very helpful in process development and yield improvement.

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