The Influence of Ionizing Radiation on Proneness to Audiogenic Seizure and Behavior in Krushinsky–Molodkina Rats

Background: In 2015, a patient in hospice with Alzheimer’s disease (AD) was treated with ionizing radiation to her brain using repeated CT scans. Improvement in cognition, speech, movement, and appetite was observed. These improvements were so momentous that she was discharged from the hospice to a long-term care home. Based on this case, we conducted a pilot clinical trial to examine the effect of low-dose ionizing radiation (LDIR) in severe AD. Objective: To determine whether the previously reported benefits of LDIR in a single case with AD could be observed again in other cases with AD when the same treatments are given. Methods: In this single-arm study, four patients were treated with three consecutive treatments of LDIR, each spaced two weeks apart. Qualitative changes in communication and behavior with close relatives were observed and recorded. Quantitative measures of cognition and behavior were administered pre and post LDIR treatments. Results: Minor improvements on quantitative measures were noted in three of the four patients following treatment. However, the qualitative observations of cognition and behavior suggested remarkable improvements within days post-treatment, including greater overall alertness. One patient showed no change. Conclusion: LDIR may be a promising, albeit controversial therapy for AD. Trials of patients with less severe AD, double-blind and placebo-controlled, should be carried out to determine the benefits of LDIR. Quantitative measures are needed that are sensitive to the remarkable changes induced by LDIR, such as biological markers of oxidative stress that are associated with AD.

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How Homo economicus lost her mind and how we can revive her

Behavioral and Brain Sciences ◽

10.1017/s0140525x1800033x ◽

2018 ◽

Vol 41 ◽

Author(s):

Peter DeScioli

Keyword(s):

Economic Thought ◽

History Of Economic Thought ◽

Homo Economicus ◽

Economic Theories ◽

Target Article ◽

History Of ◽

The Mind ◽

And Behavior

AbstractThe target article by Boyer & Petersen (B&P) contributes a vital message: that people have folk economic theories that shape their thoughts and behavior in the marketplace. This message is all the more important because, in the history of economic thought, Homo economicus was increasingly stripped of mental capacities. Intuitive theories can help restore the mind of Homo economicus.

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The parent-offspring microbiome and neurobehavioral development

Behavioral and Brain Sciences ◽

10.1017/s0140525x18002819 ◽

2019 ◽

Vol 42 ◽

Author(s):

Jeffrey R. Alberts ◽

Christopher Harshaw ◽

Gregory E. Demas ◽

Cara L. Wellman ◽

Ardythe L. Morrow

Keyword(s):

Mammalian Species ◽

Social Emotional ◽

Behavioral Measures ◽

Neurobehavioral Development ◽

Emotional Function ◽

Neurobehavioral Outcomes ◽

Methodological Approaches ◽

And Behavior

Abstract We identify the significance and typical requirements of developmental analyses of the microbiome-gut-brain (MGB) in parents, offspring, and parent-offspring relations, which have particular importance for neurobehavioral outcomes in mammalian species, including humans. We call for a focus on behavioral measures of social-emotional function. Methodological approaches to interpreting relations between the microbiota and behavior are discussed.

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Radiation-induced surface decomposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075592 ◽

1983 ◽

Vol 41 ◽

pp. 368-369

Author(s):

M. L. Knotek

Keyword(s):

Ionizing Radiation ◽

Atomic Structure ◽

Chemical Bonding ◽

Neutral Species ◽

Radiation Induced ◽

Physical And Chemical ◽

Surface Decomposition ◽

The Relationship ◽

Electron And Photon ◽

Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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