Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 53 (8) ◽  
pp. 1075-1081 ◽  
Author(s):  
A. V. Uvarov ◽  
K. S. Zelentsov ◽  
A. S. Gudovskikh
2016 ◽  
Vol 18 (24) ◽  
pp. 16377-16385 ◽  
Author(s):  
Yuan Zhang ◽  
Hong-Liang Lu ◽  
Tao Wang ◽  
Qing-Hua Ren ◽  
Hong-Yan Chen ◽  
...  

The ultraviolet emission of ZnO nanowires was enhanced significantly after coating with thin ZrO2 layers and thermal annealing.


2020 ◽  
Vol 217 (8) ◽  
pp. 1900909 ◽  
Author(s):  
Marion Scarafagio ◽  
Alexandre Tallaire ◽  
Marie-Hélène Chavanne ◽  
Michel Cassir ◽  
Armelle Ringuedé ◽  
...  

Author(s):  
А.В. Уваров ◽  
К.С. Зеленцов ◽  
А.С. Гудовских

AbstractThe effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n -type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.


2014 ◽  
Vol 665 ◽  
pp. 136-139 ◽  
Author(s):  
Li Feng Liu ◽  
Wei Bing Zhang ◽  
Yi Ran Wang ◽  
Wen Jia Ma ◽  
Guo Hui Wang ◽  
...  

HfAlOx based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlOx based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlOx based RRAM after RTA treatment is related to microstructure change in the resistive switching film.


2020 ◽  
Vol 12 (38) ◽  
pp. 43212-43221
Author(s):  
Seunghwan Lee ◽  
Miso Kim ◽  
GeonHo Baek ◽  
Hye-mi Kim ◽  
Tran Thi Ngoc Van ◽  
...  

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